Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mark L. Doczy"'
Autor:
Matthew V. Metz, Robert S. Chau, B. Jin, Marko Radosavljevic, Brian S. Doyle, Gilbert Dewey, Amlan Majumdar, Mark L. Doczy, Suman Datta, Justin K. Brask, Jack T. Kavalieros
Publikováno v:
Microelectronic Engineering. 80:1-6
High-k gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging nonsilicon nanoelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f3f0a36c04450010b97c608b4f417a
https://doi.org/10.1016/j.mee.2005.04.035
https://doi.org/10.1016/j.mee.2005.04.035
Autor:
Scott Hareland, Brian S. Doyle, Jack T. Kavalieros, Matthew V. Metz, Suman Datta, Mark L. Doczy, B. Jin, Boyan Boyanov, Robert S. Chau
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 19:1-5
Silicon transistors have undergone rapid miniaturization in the past several decades. Recently reported CMOS devices have dimensional scales approaching the “nano-transistor” regime. This paper discusses performance characteristics of a MOSFET de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c24554e36c25b663c596d4d7e0370d
https://doi.org/10.1016/s1386-9477(03)00284-4
https://doi.org/10.1016/s1386-9477(03)00284-4
We have measured the spin torques of beta-Tantalum / Co20Fe60B20 bilayers versus Ta thickness at room temperature using an FMR technique. The spin Hall coefficient was calculated both from the observed change in damping coefficient of the ferromagnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af815733897f44261b159da5015364d
Autor:
Mark L. Doczy, Luigi Colombo, Deji Akinwande, Aparna Gupta, George I. Bourianoff, Hema C. P. Movva, Gary D. Carpenter, Domingo Ferrer, Chris M. Corbet, M. Ramon, Emanuel Tutuc, Sanjay K. Banerjee
Publikováno v:
ACS nano. 5(9)
We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C(2)H(2)) as a precursor in a chemical vapor deposition (CVD)-based method. Cobalt films were deposited on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f84e23f93bd2613cb9c0f811703fc75
https://pubmed.ncbi.nlm.nih.gov/21800895
https://pubmed.ncbi.nlm.nih.gov/21800895
Autor:
Chris M. Corbet, Hema C. P. Movva, Domingo Ferrer, Emanuel Tutuc, Deji Akinwande, Luigi Colombo, Gary D. Carpenter, George I. Bourianoff, Mark L. Doczy, M. Ramon, Aparna Gupta, Sanjay K. Banerjee
Publikováno v:
69th Device Research Conference.
There has been great interest in methods for the synthesis of high-quality, large-area graphene films, as required for practical applications in the electronics industry. In particular, recent developments in chemical vapor deposition (CVD) methods h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af6ecd8787040d2eea2e71494fd7a68b
https://doi.org/10.1109/drc.2011.5994446
https://doi.org/10.1109/drc.2011.5994446
Autor:
Reza Arghavani, Brian S. Doyle, Suman Datta, Robert S. Chau, Jack T. Kavalieros, Anand S. Murthy, Doug Barlage, Mark L. Doczy
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6fba9cc2f78d5e804099e540755d51
https://doi.org/10.7567/ssdm.2002.d-1-1
https://doi.org/10.7567/ssdm.2002.d-1-1
Autor:
Hai Liu, Radhakrishna Rao, Leo Mathew, Sayan Saha, M. Ramon, Chris M. Corbet, Mark L. Doczy, Hui Xu, Samaresh Guchhait, Domingo Ferrer, F. Ferdousi, George I. Bourianoff, John T. Markert, Swaroop Ganguly, Sanjay K. Banerjee
Publikováno v:
Journal of Applied Physics. 110:014316
Controlling the morphology of inorganic nanocrystals is important because many of their electronic attributes are highly sensitive to shape and aspect ratio. FePt nanocrystals have potential as advanced magnetic materials for ultrahigh-density memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160004f987151ad5083343b49c917484
https://doi.org/10.1063/1.3608109
https://doi.org/10.1063/1.3608109