Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mark Kawaguchi"'
Publikováno v:
Solid State Phenomena. 282:201-206
The collapse of high aspect ratio features is a daunting challenge facing the semiconductor industry. The complex physics and dynamics that govern this process are not entirely understood. Through the use of optical video imaging we have observed pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef64af01243a0016b69ab78a2e98659
https://doi.org/10.4028/www.scientific.net/ssp.282.201
https://doi.org/10.4028/www.scientific.net/ssp.282.201
Publikováno v:
ECS Transactions. 80:81-89
Abstract Wafer charging becomes an increasingly important issue, thus being a key parameter in 10 nm and sub-10 nm technology nodes. Single-wafer cleaning equipment has various advantages over batch-type processes, and adoption has been widespread in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c97ca15842a029cd3189e8da6ea116b
https://doi.org/10.1149/08002.0081ecst
https://doi.org/10.1149/08002.0081ecst
Publikováno v:
Solid State Phenomena. 255:277-282
Wafer charging has become an issue since single-wafer wet clean has been introduced and multiple aspects could be potential root causes. In chemistry and DIW process factors, typical process parameters; flow rate and time were re-evaluated. As an alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1730672dfecb27cb3823cb6835c726df
https://doi.org/10.4028/www.scientific.net/ssp.255.277
https://doi.org/10.4028/www.scientific.net/ssp.255.277
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e73380405377ae0416c75f0212e52b0a
https://doi.org/10.1109/cstic.2018.8369228
https://doi.org/10.1109/cstic.2018.8369228
Publikováno v:
ECS Transactions. 69:139-144
Abstract Continuous device shrinkage beyond 3X and 2X nm increases the number of critical clean processes in semiconductor manufacturing. In order to avoid cross contamination from reclaimed chemistry, single-pass chemistry has become more commonly u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f400ac81a471beca2b50f6902dd9bb31
https://doi.org/10.1149/06908.0139ecst
https://doi.org/10.1149/06908.0139ecst
Autor:
Philipp E. Frommhold, Till Nowak, Fabian Reuter, Robert Mettin, Mark Kawaguchi, David Mui, Frank Holsteyns, Harald F. Okorn-Schmidt, Carlos Cairós, Miquel Banchs Piqué, Alexander Lippert, Christiane Lechner
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:N3069-N3080
Dealing with nanometer-sized particulate contamination is still one of the major challenges during the manufacturing of yielding semiconductor devices. This is especially true for the increasing number of critical processing steps, where residues of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589fb25e8ad29ca7139ebad6cd0fd0ec
https://doi.org/10.1149/2.011401jss
https://doi.org/10.1149/2.011401jss
Autor:
Christiane Lechner, Harald F. Okorn-Schmidt, Alexander Lippert, David Mui, Philipp E. Frommhold, Frank Holsteyns, Till Nowak, Robert Mettin, Mark Kawaguchi
Publikováno v:
ECS Transactions. 58:3-15
Dealing with nanometer-sized particulate contamination is still one of the major challenges during the manufacturing of yielding semiconductor devices. This is especially true for the increasing number of critical processing steps, where residues of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662e79c9d74b2c07b6c85b38f1acdfd5
https://doi.org/10.1149/05806.0003ecst
https://doi.org/10.1149/05806.0003ecst
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:552-558
Wet chemical processes in integrated circuit (IC) manufacturing are used in many applications, e.g., post-etch residue removal and pre-deposition surface treatment. While advanced single-wafer wet spin tools are part of the critical tool-set for adva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95bf45d4036c24ad889bc9fbdb6e70d1
https://doi.org/10.1109/tsm.2011.2162346
https://doi.org/10.1109/tsm.2011.2162346
Autor:
Mark Kawaguchi, Morton M. Denn
Publikováno v:
Journal of Rheology. 43:111-124
A kinetic equation for polydomains is used to develop a formal structure for a mesoscopic constitutive theory of textured liquid crystalline polymers. The lowest-order approximation for the texture terms leads to the Reference 1991 theory, but with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f763e13e2c338f4d1c8d0d4958cca20
https://doi.org/10.1122/1.550979
https://doi.org/10.1122/1.550979
Autor:
Yihwan Kim, Victor Moroz, M. Balseanu, Li-Qun Xia, Mark Kawaguchi, Lori D. Washington, Rita Rooyackers, F. Nouri, R. Schreutelkamp, Kristin De Meyer, T. Huang, Louisa Smith, Meihua Shen, Peter Verheyen, Sunderraj Thirupapuliyur, Xiaopeng Xu, Geert Eneman, Khaled Ahmed
Publikováno v:
IEEE Electron Device Letters. 27:511-513
Recessed Si/sub 0.8/Ge/sub 0.2/ source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhanceme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8278f8e2a12736373509eb0508e60a0
https://doi.org/10.1109/led.2006.875766
https://doi.org/10.1109/led.2006.875766