Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mark J. Wihl"'
Autor:
Zhian Guo, Aditya Dayal, Ioana Graur, Shaoyun Chen, Ge Cong, Scott Halle, Gregory McIntyre, Mark J. Wihl, Yutaka Kodera, Jaione Tirapu Azpiroz, Karen D. Badger, Emily Gallagher, Kafai Lai, Bo Mu
Publikováno v:
SPIE Proceedings.
Source Mask Optimization (SMO) describes the co-optimization of the illumination source and mask pattern in the frequency domain. While some restrictions for manufacturable sources and masks are included in the process, the resulting photomasks do no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf736e56cf6420459ff9af7786bd4063
https://doi.org/10.1117/12.830668
https://doi.org/10.1117/12.830668
Publikováno v:
Photomask Technology 2008.
High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7855c5a1307a7ed9267d4eb7e8598c4b
https://doi.org/10.1117/12.801867
https://doi.org/10.1117/12.801867
Publikováno v:
Photomask Technology 2008.
Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScan platform that uses the high signal-to-noise ratio images from the high numerical aperture mi croscope, and then models the entire lithographic process to enable defect de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b21d9af406ac708ce5e2711275db273
https://doi.org/10.1117/12.801866
https://doi.org/10.1117/12.801866
Publikováno v:
SPIE Proceedings.
High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yield-limiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a238862b8ebb497a86dbee24bf0ad7
https://doi.org/10.1117/12.793056
https://doi.org/10.1117/12.793056
Autor:
Uwe Griesinger, David G Emery, Maciej W. Rudzinski, Mark J. Wihl, Manuel Vorwerk, Larry S. Zurbrick, Michel Prudhomme, Christian Dr. Crell, Mario Hennig
Publikováno v:
SPIE Proceedings.
Phase shifting mask technology will be necessary to product integrated circuits at the 130 nm node using KrF wavelength steppers. In order to successfully accomplish this goal, it is necessary to detect and repair phase shifting defects that may occu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1aaac51ebae3b628c26df8745950c5
https://doi.org/10.1117/12.425092
https://doi.org/10.1117/12.425092