Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Mark J. Loboda"'
Autor:
Eric A. Stach, Fangzhen Wu, Gil Yong Chung, Balaji Raghothamachar, Kim Kisslinger, Yu Yang, Michael Dudley, Huanhuan Wang, Mark J. Loboda, Dong Su, Stephan G. Mueller, Li Hua Zhang, Edward K. Sanchez, Darren Hansen, Jianqiu Guo
Publikováno v:
Materials Science Forum. :85-89
Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their
Autor:
Fangzhen Wu, Bernd Thomas, Darren Hansen, Yu Yang, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Jie Zhang, Stephan G. Mueller, Jianqiu Guo, Gil Yong Chung, Mark J. Loboda, T.A. Venkatesh, Huanhuan Wang
Publikováno v:
Materials Science Forum. :319-322
Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition (CVD) has been studied using Synchrotron X-ray Topography and KOH etching. Studies carried out before and after epilayer growth have revealed that, i
Publikováno v:
physica status solidi c. 12:418-422
The results of studies focused on understanding materials-electrical correlations for GaN-based films deposited on 150 mm diameter Si wafers in a batch MOCVD system are reported. A wide range of film stress and electrical conduction is observed at co
Publikováno v:
physica status solidi c. 12:385-388
The reflectance-time profile of AlN-on-Si(111) growth by MOCVD as acquired through an in-situ optical reflectance monitor is analyzed. It is found that, similar to the case of GaN-on-sapphire nucleation and growth through the low temperature GaN or A
Autor:
Fangzhen Wu, Jie Zhang, Balaji Raghothamachar, Yu Yang, Michael Dudley, Gil Yong Chung, Edward K. Sanchez, Stephan G. Mueller, Darren Hansen, B. Thomas, Mark J. Loboda, Huanhuan Wang, Jianqiu Guo
Publikováno v:
ECS Transactions. 64:145-152
A review is presented of recent monochromatic and white beam synchrotron topography based studies of defects in SiC substrates and epilayers. The methodologies used in applying these techniques to gain understanding of the origins and evolution of th
Autor:
Jie Zhang, Yu Yang, Huanhuan Wang, Jianqiu Guo, Michael Dudley, Fangzhen Wu, Balaji Raghothamachar, Darren Hansen, B. Thomas, Stephan G. Mueller, Gilyong Chung, Edward K. Sanchez, Mark J. Loboda
Publikováno v:
ECS Transactions. 64:125-131
Synchrotron topographic and optical microscopic studies are presented of stacking faults formed during homo-epitaxy of 4H-SiC. Grazing incidence synchrotron white beam x-ray topographs reveal V and Y shaped features which transmission topographs reve
Autor:
Mark J. Loboda, Yu Yang, Jianqiu Guo, Jie Zhang, Fangzhen Wu, Michael Dudley, Darren Hansen, Stephan G. Mueller, B. Thomas, Gil Yong Chung, Balaji Raghothamachar, Edward K. Sanchez, Huanhuan Wang
Publikováno v:
ECS Transactions. 64:213-222
Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition (CVD) has been studied using Synchrotron X-ray Topography and KOH etching. Studies carried out before and after epilayer growth have revealed that, i
Autor:
Edward K. Sanchez, Mark J. Loboda, Sha Yan Byrapa, Jie Zhang, Darren Hansen, Fangzhen Wu, Michael Dudley, Gil Yong Chung, Stephan G. Mueller, Bernd Thomas, Balaji Raghothamachar, Yu Yang, Huanhuan Wang
Publikováno v:
Materials Science Forum. :332-337
Nomarski optical microscopic, KOH etching and synchrotron topographic studies are presented of faint needle-like surface morphological features in 4H-SiC homoepitaxial layers. Grazing incidence synchrotron white beam x-ray topographs show V shaped fe
Autor:
Stephan G. Mueller, Timothy J. Toth, Darren Hansen, Jie Zhang, Ian Manning, Junichi Uchiyama, Jeff P. Quast, Mark J. Loboda, Gil Yong Chung, Bernd Thomas
Publikováno v:
Materials Science Forum. :103-108
Results are presented for epitaxial SiC layers grown on 100 mm and 150 mm wafers suitable for power devices by CVD using a VP2800WW multi-wafer reactor with 10×100mm and 6×150mm configurations. We have demonstrated continuous improvement in uniform
Autor:
Bernd Thomas, Darren Hansen, Huanhuan Wang, Stephan G. Mueller, Fangzhen Wu, Edward K. Sanchez, Mark J. Loboda, Gil Yong Chung, Jie Zhang, Michael Dudley, Balaji Raghothamachar
Publikováno v:
Materials Science Forum. :328-331
Synchrotron X-ray Beam Topography (SWBXT) and KOH etching observations are presented of interfacial dislocations (IDs) and half-loop arrays (HLAs) which can form under certain growth conditions during homoepitaxy of 4H-SiC on off-cut substrates. The