Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Mark Hoinkis"'
Autor:
James R. Lyerla, H. R. Wendt, Donald S. Bethune, Robert D. Johnson, Larry T. Taylor, D. Nguyen, Jesse R. Salem, Costantino S. Yannoni, R.L. Siemens, Mark Hoinkis, M. S. Crowder, Harry C. Dorn, Charles A. Brown, M.S. de Vries, P. Jedrzejewski
Publikováno v:
Synthetic Metals. 59:279-295
The results of a variety of experiments used to characterize fullerenes, metallofullerenes and alkali-metal intercalated C60 are reported. It is shown that differential scanning calorimetry and NMR characterization of the orientational phase transiti
Autor:
Jesse R. Salem, Robert D. Johnson, Costantino S. Yannoni, Mark Hoinkis, Mattanjah S. de Vries, Donald S. Bethune, M. S. Crowder
Publikováno v:
Zeitschrift f�r Physik D Atoms, Molecules and Clusters. 26:153-158
Fullerenes containing metal atoms and clusters can be formed by the arc-vaporization method. The electronic structure of these metallofullerenes can be probed using magnetic resonance techniques. Electron paramagnetic resonance (EPR) spectra of LaC82
Autor:
M. S. Crowder, Jesse R. Salem, Mark Hoinkis, Costantino S. Yannoni, Donald S. Bethune, Robert D. Johnson, M.S. de Vries
Publikováno v:
ChemInform. 24
Autor:
Jesse R. Salem, M.S. de Vries, Costantino S. Yannoni, Mark Hoinkis, Robert D. Johnson, Donald S. Bethune, M. S. Crowder
Publikováno v:
Chemical Physics Letters. 198:461-465
Two dominant electron paramagnetic resonance (EPR) hyperfine patterns for both La and Y fullerenes have been identified and linked to the mass spectroscopic (MS) peaks of La@C 82 and Y@C 82 , respectively, as also observed by Suzuki. Additionally, lo
Autor:
Erdem Kaltalioglu, Zhijiong Luo, Victor Ku, Y. H. Lin, A. Ajmera, Seong-Dong Kim, T. Schiml, W. L. Tan, S. Marokkey, P. Wrschka, Dirk Vietzke, M. Weybright, F.F. Jamin, R. Mo, D.-G. Park, An L. Steegen, Wenhe Lin, Padraic Shafer, Terence B. Hook, V. Klee, JiYeon Ku, Rajesh Rengarajan, C. Wann, K. Kim, Jenny Lian, Andy Cowley, Victor Chan, Sunfei Fang, A. Vayshenker, K-C. Lee, Christopher V. Baiocco, I. Yang, L. Kim, Manfred Eller, Randy W. Mann, B. Zhang, C. Coppock, Mark Hoinkis, J. Sudijono, Huilong Zhu, Phung T. Nguyen
Publikováno v:
Scopus-Elsevier
This paper reports a cutting-edge 65nm CMOS technology featuring high performance and low power CMOS devices for both general and low power applications. Utilizing plasma nitrided gate oxide, off-set and slim spacers, advanced co-implants, NiSi and l
Autor:
P. Wensley, Norman Robson, B. Lemaitre, E. Demm, F. Grellner, C. Wann, P. Kim, Klaus Schruefer, Robert C. Wong, G. Friese, G. Knoblinger, O. Prigge, R. Zoeller, Robert Hannon, J. Barth, G. Brase, Mark Hoinkis, Reinhard Mahnkopf, J. Pape, S.S. Iyer, T. Schiml, B. Flietner, K. Han, K. Holloway, F. Towler, Michael D. Armacost, A. Augustin, Nivo Rovedo, R. Busch, R. Mih, Terence B. Hook, W. Neumueller, G. Dietz, Chih-Yung Lin, B. Chen, S. Srinivasan, M. Stetter, Herbert L. Ho, Thomas Schafbauer, K.-H. Allers
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
A 0.18 /spl mu/m high performance/low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process additional modules can be added in a modular and cost effect
Autor:
Stefan J. Weber, L. Yang, G.Z. Lu, R.F. Schnabel, D. Tobben, Chenting Lin, J. L. Hurd, Sunny Chiang, R. Filippi, J. Ning, Kenneth P. Rodbell, T. Gou, R. Longo, M. Ronay, Roderick C. Mosely, L. Gignac, Mark Hoinkis, R. Ploessl, S. Voss, Clevenger Leigh Anne H, Jeffrey P. Gambino, Lian-Yuh Chen, G. Costrini, D.M. Dobuzinsky, J.F. Nuetzel, R. C. Iggulden
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
As VLSI back end of line (BEOL) wiring is scaled to 0.175 /spl mu/m dimensions and sub-0.5 /spl mu/m pitches, the challenges to conventional Al RIE BEOL processes are the etching and the reliability of tall/narrow Al lines and the oxide gap fill and
Autor:
E. Hsiung, Terry A. Spooner, G. Brase, Erdem Kaltalioglu, F. Grellner, Mark Hoinkis, B. von Ehrenwall, D. Warner, Klaus Schruefer, T. Schiml, L. Burrell, Robert C. Wong, C. Wang, Thomas Schafbauer, A. Von Ehrenwall, Tobias Mono, P. Kim, G. Knoblinger, Fernando Guarin, K.C. Chen, Petra Felsner, Alan J. Leslie, Uwe Schroeder, S. Biesemans, E. Demm, Andy Cowley, J. Gill, L.K. Han, S. Kulkarni, P. Leung
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
We describe an advanced 0.13 /spl mu/m CMOS technology platform optimized for density, performance, low power and analog/mixed signal applications. Up to 8 levels of copper interconnect with the industry's first true low-k dielectric (SiLK, k=2.7) (G
Autor:
Mark Hoinkis, Robert D. Johnson, Robert E. Jones, Susan M. Holl, Jeffrey L. Williams, Catherine E. Caley, Vlad J. Novotny
Publikováno v:
MRS Proceedings. 339
Amorphous carbon films are (a-C:H) of interest because of their useful physical properties. They are extremely hard and chemically inert, resisting degradation by both acids and alkalis. They are insoluble and can be conformably coated onto virtually
Autor:
Jesse R. Salem, Donald S. Bethune, M. S. Crowder, Costantino S. Yannoni, Robert D. Johnson, Mattanjah S. de Vries, Mark Hoinkis
Publikováno v:
MRS Proceedings. 270
We report here the arc-production and spectroscopic characterization of fullerene-encapsulated metal atoms and metal-atom clusters. In particular, both solution and solid-stateelectron paramagnetic resonance (EPR) spectra of LaC82', YC82', SCC82' and