Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Mark Heyns"'
Autor:
Eddy Simoen, Yves Mols, Geert Eneman, Mark Heyns, Bernadette Kunert, Robert Langer, Nadine Collaert, Niamh Waldron, Liang He, Cor Claeys, Po-Chun Hsu
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
An overview is given on how to tackle the question of the electrical activity of extended defects which are inevitably present in hetero-epitaxial III-V layers on silicon. Analysis methods are described which rely on simple device structures containi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4ca2bc881cd6492d0fcef1adef1732
https://doi.org/10.1109/cstic.2018.8369190
https://doi.org/10.1109/cstic.2018.8369190
