Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mark Heyns"'
Autor:
Eddy Simoen, Yves Mols, Geert Eneman, Mark Heyns, Bernadette Kunert, Robert Langer, Nadine Collaert, Niamh Waldron, Liang He, Cor Claeys, Po-Chun Hsu
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
An overview is given on how to tackle the question of the electrical activity of extended defects which are inevitably present in hetero-epitaxial III-V layers on silicon. Analysis methods are described which rely on simple device structures containi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4ca2bc881cd6492d0fcef1adef1732
https://doi.org/10.1109/cstic.2018.8369190
https://doi.org/10.1109/cstic.2018.8369190
Publikováno v:
ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, pxxi-xxviii, 8p
Publikováno v:
Sports Illustrated. 12/13/99, Vol. 91 Issue 23, Following p32. 1p. 1 Color Photograph.
Publikováno v:
2003 International Symposium on VLSI Technology, Systems & Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672); 2003, pN.PAG, 1p
Autor:
B.E. Deal, C.R. Helms
The first international symposium on the subject'The Physics and Chemistry of Si02 and the Si-Si02 Interface,'organized in association with the Electrochemical Society, Inc., was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained
Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve ef