Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Mark Ghinovker"'
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383190a390b0d7c52546266ec8595ea6
https://doi.org/10.1117/12.2657850
https://doi.org/10.1117/12.2657850
Autor:
Xiaolei Liu, Yoav Grauer, Raviv Yohanan, Mark Ghinovker, Diana Shaphirov, Yasuhisa Iwata, Koichi Imura, Kosuke Ito
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f32212e678f46c56f9d756102e3f492
https://doi.org/10.1117/12.2614129
https://doi.org/10.1117/12.2614129
Autor:
Nahee Park, Dohwa Lee, Liu Liu, Xuefei Zhou, Hongpeng Su, DongSub Choi, Wayne Zhou, Hedvi Spielberg, Efi Megged, Chen Dror, Diana Shaphirov, Zephyr Liu, Mark Ghinovker, DongYoung Lee, Hongbok Yeon, Hyunjun Kim, Sukwon Park, Bohye Kim, Honggoo Lee, Sangho Lee
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c2c7efc3be8f8bbcc7e2039896893f
https://doi.org/10.1117/12.2608053
https://doi.org/10.1117/12.2608053
Autor:
Katya Gordon, Hedvi Spielberg, Diana Shaphirov, Xiaolei Liu, Eltsafon Ashwal, Eitan Hajaj, Philippe Leray, Mark Ghinovker, Chen Dror, Raviv Yohanan, Zephyr Liu, Dieter Van den Heuvel, Roel Gronheid
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As design nodes of advanced semiconductor chips shrink, reduction in on-product overlay (OPO) budget becomes more critical to achieving higher yield. Imaging-based overlay (IBO) targets usually consist of periodic patterns where their pitches are res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a71df7b888ddfb6580f81ecc9e7b9d1
https://doi.org/10.1117/12.2585876
https://doi.org/10.1117/12.2585876
Autor:
Mark Ghinovker, Katya Gordon, Eltsafon Ashwal, Eitan Hajaj, Isaac Salib, Raviv Yohanan, Xiaolei Liu, Chen Dror, Zephyr Liu, Diana Shaphirov
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In recent years, simulation-based analysis has become an integral phase in metrology targets design process, performances optimization wise to support on product overlay (OPO) reduction, accuracy and robustness to process variation. Moreover, a simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3138996e91dd72b952a0be9774c46313
https://doi.org/10.1117/12.2584525
https://doi.org/10.1117/12.2584525
Autor:
Chanha Park, Xiaolei Liu, Dongyoung Lee, Chen Dror, Eltsafon Ashwal, Dongsoo Kim, Sanghuck Jeon, Zephyr Liu, Katya Gordon, Honggoo Lee, Eitan Hajaj, Mark Ghinovker, Diana Shaphirov, Sang-Ho Lee, Dongsub Choi, Dohwa Lee, Raviv Yohanan
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Reduction in on product overlay (OPO) is a key component for high-end, high yield integrated circuit manufacturing. Due to the continually shrinking dimensions of the IC device elements it has become near-impossible to measure overlay on the device i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c6be2fb79531aea498fc923d2afaeb1
https://doi.org/10.1117/12.2584524
https://doi.org/10.1117/12.2584524
Autor:
Chen Dror, Guy Ben-Dov, Michael E. Adel, Mark Ghinovker, Ze'ev Lindenfeld, Jeffery Hodges, Inna Tarshish-Shapir, Sarah Wu, Eitan Hajaj, Jianming Zhou, David Gready, Greg Gray, Sam Moore
Publikováno v:
SPIE Proceedings.
Overlay metrology performances highly depend on the detailed design of the measured target. Hence performing simulations is an essential tool for optimizing target design. We demonstrate for scatterometry overlay (SCOL) three key factors which enable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f4ad077f3b67ed4ae30036d16c8657
https://doi.org/10.1117/12.2219181
https://doi.org/10.1117/12.2219181
Autor:
Sang Hyun Han, Michael E. Adel, Seung Yoon Lee, Mohamed El Kodadi, Guy Ben-Dov, Dongsub Choi, Soonho Oh, Chan Hwang, Kun-tack Lee, Inna Tarshish-Shapir, Eitan Herzel, David Gready, Jeongjin Lee, Mark Ghinovker
Publikováno v:
SPIE Proceedings.
Overlay metrology target design is an essential step prior to performing overlay measurements. This step is done through the optimization of target parameters for a given process stack. A simulation tool is therefore used to improve measurement perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f6304d4fbb7509845075242e531c90
https://doi.org/10.1117/12.2219108
https://doi.org/10.1117/12.2219108
Autor:
Mark Ghinovker, Michael E. Adel, Inna Tarshish-Shapir, David Gready, Chen Dror, Stephane Godny
Publikováno v:
SPIE Proceedings.
Computational metrology target design requires both an accurate metrology simulation engine and an accurate geometric model. This paper deals with the later. Optical critical dimension metrology and cross-section SEM are demonstrated as two useful me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7283a073bdc364af18b8aae4cbb20285
https://doi.org/10.1117/12.2086084
https://doi.org/10.1117/12.2086084
Autor:
Karsten Gutjahr, Amir Widmann, Christian Sparka, Michael Kubis, Alessandra Navarra, Anat Marchelli, Mark Ghinovker
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
As the overlay performance and accuracy requirements become tighter, the impact of process parameters on the target signal becomes more significant. Traditionally, in order to choose the optimum overlay target, several candidates are placed in the ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e41660ea68b436b35988ea44f4e5cbc2
https://doi.org/10.1117/12.813594
https://doi.org/10.1117/12.813594