Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mark Gerard Nolan"'
Autor:
Konrad Seidel, Cheng Lili, Wenke Weinreich, Mark Gerard Nolan, A. Gummenscheimer, Dina H. Triyoso, Patrick Polakowski, M. Drescher
Publikováno v:
ICICDT
Presented within this paper is a study on thin La-doped ZrO 2 films used as dielectric material in decoupling capacitors in BEoL. The effect of combined atomic layer deposition processes and the integration concept of La are discussed with respect to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::245167cf215adc8713bfd1e6730460c5
https://doi.org/10.1109/icicdt.2016.7542062
https://doi.org/10.1109/icicdt.2016.7542062
Autor:
Mark Gerard Nolan, L. Wilde, Dina H. Triyoso, P. Polakowski, Stefan Riedel, Konrad Seidel, Wenke Weinreich
Publikováno v:
ICICDT
In this paper three different ZrO 2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692cfbbcfabe5d02d6d09910da992695
https://doi.org/10.1109/icicdt.2014.6838604
https://doi.org/10.1109/icicdt.2014.6838604
Autor:
K. Seidell, Kornelia Dittmar, Mark Gerard Nolan, Dina H. Triyoso, M. Licbau, M. Weisheit, Robert Fox, Patrick Polakowski, Dirk Utess, Wenke Weinreich, Susanne Ohsiek
Publikováno v:
ICICDT
Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta 2 O 5 and Hf-doped Ta 2 O 5 high-k MIM capacitors. We investigated the impact of precursor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed9f3aa011476e361ca20f2eef6e5cf8
https://doi.org/10.1109/icicdt.2014.6838595
https://doi.org/10.1109/icicdt.2014.6838595
Autor:
Robert Fox, David P. Brunco, Konrad Seidel, Rod Miller, Dina H. Triyoso, Carl Kyono, Kok-Yong Yiang, Patrick Lomtscher, Maik Liebau, Sanford Chu, Jeasung Park, Cheng Lili, Jochen Rinderknecht, Dirk Utess, Wenke Weinreich, Mark Gerard Nolan
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
As operating frequency and circuit density of VLSI systems continue to increase, the L*di/dt induced voltage fluctuations in the power grid increasingly becomes a source of voltage/timing problems. On-chip decoupling capacitors, placed in close proxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f125ef2723bd1f3cb462c66d8aa6f851
https://doi.org/10.1109/vlsi-tsa.2014.6839694
https://doi.org/10.1109/vlsi-tsa.2014.6839694
Autor:
Dina H. Triyoso, Mark Gerard Nolan, Kok-Yong Yiang, Patrick Polakowski, Konrad Seidel, Wenke Weinreich, Sanford Chu
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
In this paper, the authors have shown that the Al-doping concentration of ZrO2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO2 suffers from early failures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4fa16e3a7959090f87e09450abbc76
https://doi.org/10.1109/iirw.2013.6804190
https://doi.org/10.1109/iirw.2013.6804190