Zobrazeno 1 - 10
of 286
pro vyhledávání: '"Mark E. Law"'
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085111-085111-6 (2019)
The most common n-type dopant, Si, was implanted into bulk (-201) β-Ga2O3 at total doses from 2x1013-2x1015 cm-2 and annealed at 1100 °C for 10-120 secs in either O2 or N2 ambients. Secondary Ion Mass Spectrometry profiling showed a significant eff
Externí odkaz:
https://doaj.org/article/e40f10c3837b4983897a3a7986f55ceb
Autor:
Chappel S. Thornton, Blair Tuttle, Emily Turner, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Publikováno v:
ACS Applied Materials & Interfaces. 14:29422-29430
A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we r
Autor:
T. A. Weingartner, Lars Bjorndal, Miguel Antonio Sulangi, Nimesh Pokhrel, Mark E. Law, Erin Patrick
Publikováno v:
IEEE Transactions on Electron Devices. 68:5448-5454
We report the development of a process/device simulation platform to model superconductor electronics. The process simulator leverages the back-end modeling capabilities of Florida object-oriented process/device/reliability simulator (FLOOXS) and bui
Publikováno v:
IEEE Transactions on Applied Superconductivity. 31:1-5
By modeling the propagation of a seed layer with various crystal orientations, this study explores the influence of process variations on grain formation with the help of a physics-based process simulator. Grain boundaries allow easy diffusion of for
Autor:
Chappel S. Thornton, Xiao Shen, Blair Tuttle, Xuebin Li, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Publikováno v:
Journal of Applied Physics. 133:135301
Dopant profiles near the semiconductor–oxide interface are critical for microelectronic device performance. As the incorporation of Si1−xGex into transistors continues to increase, it is necessary to understand the behavior of dopants in Si1−xG
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035003
In this study, the response to a heavy-ion strike and the resulting single effect burnout on beta-Ga2O3 Schottky diodes with biased field rings is investigated via TCAD. The model used to simulate the device under high-reverse bias is validated using
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1310-1312
Some packaging technologies of electronic devices introduce compressive biaxial stress and variable vertical stress. In unipolar MOS devices, stress variations typically only linearly affect drain current via carrier mobility. Collector currents of b
Autor:
Minghan Xian, Fan Ren, Marko J. Tadjer, Ribhu Sharma, Mark E. Law, Peter E. Raad, Pavel L. Komarov, Zahabul Islam, Aman Haque, S.J. Pearton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bec5ffda882f6eb94629a7b1ed7311
https://doi.org/10.1016/b978-0-12-821084-0.00001-9
https://doi.org/10.1016/b978-0-12-821084-0.00001-9
Autor:
Habib Ahmad, Ozgur Aktas, M.G. Ancona, Travis J. Anderson, Cem Basceri, Josephine Chang, Bikramjit Chatterjee, Zhe Cheng, Sukwon Choi, Volker Cimalla, W. Alan Doolittle, Tatyana I. Feygelson, Brian Foley, Daniel Francis, John T. Gaskins, Thomas Gerrer, Ashutosh Giri, Samuel Graham, Aman Haque, Eric Heller, Karl D. Hobart, Mark W. Holtz, Patrick E. Hopkins, Robert Howell, Zahabul Islam, Pavel L. Komarov, Martin Kuball, Mark E. Law, Lucas Lindsay, Elison Matioli, Callum Middleton, Codie Mishler, Alyssa L. Mock, Vladimir Odnoblyudov, David H. Olson, Bradford B. Pate, Georges Pavlidis, S.J. Pearton, Edwin L. Piner, Peter E. Raad, Fan Ren, Travis L. Sandy, Ribhu Sharma, Jingjing Shi, Daniel Shoemaker, Aditya Sood, Joseph A. Spencer, Marko J. Tadjer, John A. Tomko, Remco van Erp, Hiu-Yung Wong, Minghan Xian, Yuhao Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787bcc0ab72fa9bfb466044ab766f477
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
Autor:
Keith Green, Andrew Thomas, Polina Leger, Mark E. Law, T. A. Weingartner, Henry Douglas Johnson
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this work we present a finite element quasi-Fermi implementation of a generalized first principles strain model for silicon. Strain effects in silicon are often modeled with separate mobility, bandgap, density of states, piezo-Hall, temperature, a