Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Mark D. Jaffe"'
Autor:
John Ellis Monaghan, Satyasuresh Choppalli, Venkata Narayana Rao Vanukuru, Alvin J. Joseph, Balaji Swaminathan, Anupam Dutta, Mark D. Jaffe, Yue Tan, Randy Wolf, Ron Logan
Publikováno v:
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
In this paper, significant improvement in cascode LNA performance is demonstrated by using a new high self gain (HSG) common gate (CG) transistor. Emphasis has been on making the output conductance $g_{ds}$ lower and flatter with drain bias. A protot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a7f71cc69a492136c03162ba30966b
https://doi.org/10.1109/sirf46766.2020.9040175
https://doi.org/10.1109/sirf46766.2020.9040175
Publikováno v:
Circuits at the Nanoscale ISBN: 9781315218762
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16a45c67cf13bac3881c470b47832f7f
https://doi.org/10.1201/9781315218762-24
https://doi.org/10.1201/9781315218762-24
Autor:
Venkata Narayana Rao Vanukuru, Steven M. Shank, Anthony K. Stamper, Balaji Swaminathan, Aaron L. Vallett, Alvin J. Joseph, Rick Phelps, John J. Ellis-Monaghan, Adusumilli Siva P, Mark D. Jaffe, Ananth Sundaram, Michel J. Abou-Khalil, Randy L. Wolf
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Integration of high performance switch with Low Noise Amplifier (LNA) devices results in state of the art performance for 5G Front End Module applications. Here we review switch+ LNA performance metrics and its evolution over the last 10 years and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860583922fa3636996b47a40adbb3240
https://doi.org/10.1109/s3s.2018.8640205
https://doi.org/10.1109/s3s.2018.8640205
Autor:
John J. Ellis-Monaghan, James A. Slinkman, Michel J. Abou-Khalil, Steven M. Shank, Richard A. Phelps, Zhong-Xiang He, Jeff Gross, Jeffrey P. Gambino, Mark D. Jaffe, Randy L. Wolf, Alan B. Botula, Alvin J. Joseph
Publikováno v:
2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c17dda753c1a9ba7f5c8b7e7470b2a2
https://doi.org/10.1109/sirf.2015.7119865
https://doi.org/10.1109/sirf.2015.7119865
Autor:
Randy L. Wolf, Robert M. Rassel, Shyam Parthasarathy, Mccallum-Cook Ian, Hanyi Ding, K. Newton, Renata Camillo-Castillo, Anthony K. Stamper, Mark D. Jaffe, Alvin J. Joseph, James S. Dunn, Michael J. Zierak, Srikanth Srihari, Vibhor Jain, Nicholas Theodore Schmidt
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1651b1e12c438e8df1171a884ce0492b
https://doi.org/10.1109/bctm.2014.6981278
https://doi.org/10.1109/bctm.2014.6981278
Autor:
Kimball M. Watson, J. Malinowski, T. Aoki, J. Gambino, Mark D. Levy, K.K. Sims, P.F. Chapman, R.S. Graf, A. Cote, G.A. Mason, W. Guthrie, Mark D. Jaffe
Publikováno v:
IEEE International Interconnect Technology Conference.
RF devices are sensitive to noise coupling between devices. One source of coupling is the edge seal ring. We propose using a segmented guard ring to reduce coupling between devices. We demonstrate that the segmented guard ring is reliable for a 0.18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b19ec123b9aa35db23dc0e4d181fa79
https://doi.org/10.1109/iitc.2014.6831836
https://doi.org/10.1109/iitc.2014.6831836
Autor:
Eric A. Johnson, Derrick Liu, Mark D. Jaffe, Anthony K. Stamper, Shyam Parthasarthy, Michael J. Zierak, James S. Dunn, Alvin J. Joseph, Renata Camillo-Castillo, Hanyi Ding, Robert M. Rassel, Venkata Vanakuru, Jeff Gambino, Santosh Sharma
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c611243ecd4ee603fe792c409d4bc6d4
https://doi.org/10.1109/bctm.2013.6798183
https://doi.org/10.1109/bctm.2013.6798183
Autor:
Mark D. Jaffe, Alan B. Botula, Randy L. Wolf, Steven Moss, James A. Slinkman, Michel J. Abou-Khalil, John J. Ellis-Monaghan, Alvin J. Joseph, Rick Phelps
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
In this study, we define and investigate the maximum power handling capability (Pmax) in an SOI RF shunt branch switch. One of the critical factor in the Pmax is the non-uniform voltage division across an OFF shunt branch. In this study we provide a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8c0ae730b765fda8e05bebec647385
https://doi.org/10.1109/rfic.2013.6569611
https://doi.org/10.1109/rfic.2013.6569611
Autor:
Alvin J. Joseph, Theodore J. Letavic, James A. Slinkman, Michel J. Abou-Khalil, Mark D. Jaffe, Alan B. Botula
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We present a new device design for 20V application in thin body SOI technology. High breakdown voltage is achieved by forming RX-bound field plates which deplete the drift region of an LDMOS structure using only lateral electric field coupling. A bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aebdad9e21024dbaf5672e4ecc9e8df
https://doi.org/10.1109/ispsd.2013.6694464
https://doi.org/10.1109/ispsd.2013.6694464
Autor:
Wendell P. Noble, B. F. Lloyd, Steven J. Holmes, Stephen Frank Geissler, Jerome B. Lasky, Eric Adler, Michael D. Armacost, James S. Nakos, Glen L. Miles, Steven H. Voldman, Mark D. Jaffe, Jeffrey B. Johnson, Richard A. Ferguson, John K. DeBrosse, C. W. Koburger
Publikováno v:
IBM Journal of Research and Development. 39:167-188
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b34f9c3e058ca3d59b35c69cb5a449e
https://doi.org/10.1147/rd.391.0167
https://doi.org/10.1147/rd.391.0167