Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Mark A. Wendman"'
Publikováno v:
Review of Scientific Instruments. 69:2981-2987
Two new methods for probing evanescent fields using a Dimension™ 3000 atomic force microscope (AFM) from Digital Instruments are described. The first method uses a fiber-optic pickup probe to collect light generated by a commercial silicon AFM prob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dce26f2ff375dfa5eb1e1924a9ac6786
https://doi.org/10.1063/1.1149044
https://doi.org/10.1063/1.1149044
Autor:
Neil H. Thomson, Paul K. Hansma, G. Gurley, Jason Cleveland, D. A. Walters, Mark A. Wendman, V. Elings
Publikováno v:
Review of Scientific Instruments. 67:3583-3590
We have designed and tested a family of silicon nitride cantilevers ranging in length from 23 to 203 μm. For each, we measured the frequency spectrum of thermal motion in air and water. Spring constants derived from thermal motion data agreed fairly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b3d6c9880f2ba0188e23158f8792d64
https://doi.org/10.1063/1.1147177
https://doi.org/10.1063/1.1147177
Publikováno v:
Microelectronics Reliability. 33:1947-1956
In IC research centers over the past two years, the Atomic Force Microscope (AFM) has become a fairly common tool. Nondestructive imaging with nanometer resolution on uncoated samples in ambient conditions is proving to have a wide range of applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd77d6f80fd1aaa1ab8a026a4de5c9f
https://doi.org/10.1016/0026-2714(93)90095-g
https://doi.org/10.1016/0026-2714(93)90095-g
Publikováno v:
Applied Physics Letters. 73:1658-1660
Using a 26 μm cantilever with a resonant frequency of 100 kHz in water, we were able to obtain sequential images of calcite crystal steps growing from a screw dislocation. The small cantilever permitted acquisition of 250 nm images at scan rates of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::396f02f65c7ed1d4398dfcc43ed19431
https://doi.org/10.1063/1.122237
https://doi.org/10.1063/1.122237
Autor:
Mario B. Viani, Mark A. Wendman, D. A. Walters, Paul K. Hansma, George T. Paloczi, Tilman E. Schaeffer, Jason Cleveland, Virgil B. Elings, G. Gurley
Publikováno v:
SPIE Proceedings.
We have applied a new generation of short cantilevers with high resonant frequencies to tapping mode atomic force microscopy of a process in situ. Crystal growth in the presence of protein has been imaged stably at 79 lines/s (1.6 s/image), using a 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff836e053770981b828c1766b782f4f1
https://doi.org/10.1117/12.271227
https://doi.org/10.1117/12.271227
Publikováno v:
SPIE Proceedings.
The adaptation of a Digital Instruments DimensionTM 3000 atomic-force microscope to provide a near-field scanning optical microscopy capability is described. The enabling technology for the adaptation is the bent optical fiber probe. The design and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7960b2abbff09e2bb262996ecafa2b05
https://doi.org/10.1117/12.271220
https://doi.org/10.1117/12.271220
Autor:
Paul K. Hansma, Barney Drake, Jason Cleveland, Mario B. Viani, Mark A. Wendman, Tilman E. Schaeffer, D. A. Walters, Erik K. Runge
Publikováno v:
SPIE Proceedings.
We have designed and built an atomic force microscope (AFM) with optical beam deflection detection providing a focused spot size of 1.6 micrometers in diameter. This small spot size was implemented with a variable focus adjustment that allows us to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67512b4936f78c7bd7d7ce7ecea8114a
https://doi.org/10.1117/12.271228
https://doi.org/10.1117/12.271228
Autor:
Mark A. Wendman, W. Lee Smith
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:559-562
The ability of thermal wave techniques to nondestructively measure ion implant doses on NMOS product wafers is demonstrated. The correlation of thermal wave measurement signal to electrical parameters and as-dialed dose is examined. Results are prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a2e635a48d036e4dc3e7f49817a4cc
https://doi.org/10.1016/0168-583x(87)90903-7
https://doi.org/10.1016/0168-583x(87)90903-7