Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Mark A. Hollis"'
Autor:
Theodore H. Fedynyshyn, Joseph O. Varghese, C.H. Wuorio, Steven A. Vitale, Michael W. Geis, Robert J. Nemanich, Mark A. Hollis, Timothy A. Grotjohn, Maxwell E. Plaut, Travis C. Wade
Publikováno v:
Diamond and Related Materials. 84:86-94
The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make field effect transistors (FETs). Previous reports have suggested that during NO2 exposure (NO2-activation), NO2− forms on the
Autor:
Mark A. Hollis, D. M. Lennon, Theodore H. Fedynyshyn, Steven A. Vitale, Joseph O. Varghese, Michael W. Geis, Travis C. Wade, Robert J. Nemanich, Timothy A. Grotjohn
Publikováno v:
Diamond and Related Materials. 76:79-85
The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can significantly affect this conduction layer. This article discusses the effect of diamond sur
Autor:
Sameh G. Khalil, Mietek Bakowski, Robert Kaplar, Peter Moens, Stanley Atcitty, Jason C. Neely, Andrew T. Binder, Mark A. Hollis, Jack Flicker, Jon Zhang, Victor Veliadis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf3bf50461d473066b0d8406bd4a2e8
https://doi.org/10.2172/1762661
https://doi.org/10.2172/1762661
Autor:
John Shalf, Paul Ohodnicki, Sreekant Narumanchi, Suman Datta, Srabanti Chowdhury, Eric Colby, Todd C. Monson, Andy Schwartz, Vicki Skonicki, Dushan Boroyevich, Tsu-Jae King Liu, Simon S. Ang, Justin R. Rattner, Valerie Taylor, Supratik Guha, Harry A. Atwater, Mark A. Hollis, Kerstin Kleese van Dam, Jerry A. Simmons, Matthew J. Marinella, Ramamoorthy Ramesh, Debdeep Jena, Katie Runkles, James A. Ang, Robinson E. Pino, Gil Herrera, Tom Theis, Michael Witherell, Jack Flicker, Khurram K. Afridi, Sayeef Salahuddin, Robert Kaplar, Joseph E. Harmon, Noble M. Johnson, Michele Nelson, Sriram Krishnamoorthy, Shadi Shahedipour-Sandvik, William J. Chappell, Daniel A. Reed, Peter M. Kogge, Jon Bock, Michael L. Schuette, Kenneth A. Jones, Keith S. Evans, Rick Stevens, Cherry Murray, Thomas M. Conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e09a10f40d1c05f9ad0dd024312976
https://doi.org/10.2172/1616249
https://doi.org/10.2172/1616249
Publikováno v:
ECS Meeting Abstracts. :1334-1334
Recently there has been much interest in wide- and ultra-wide-bandgap (WBG/UWBG) semiconductors for power conversion, radio-frequency, and other applications. The benefits of these materials for high-power devices ultimately stems from the increase i
Publikováno v:
Applied Physics Letters. 114:063502
This letter demonstrates amplification of surface acoustic waves through the application of dc electric fields in low sheet density heterostructures of AlxGa1−xN barrier layers over GaN grown by metal organic chemical vapor deposition on a sapphire
Autor:
Frederick J. O'Donnell, Mark A. Hollis, Jason J. Plant, A. Napoleone, Leo J. Missaggia, Siva Yegnanarayanan, Douglas C. Oakley, Paul W. Juodawlkis
Publikováno v:
Conference on Lasers and Electro-Optics.
We describe design enhancements to increase the bandwidth of variable-confinement slab-coupled optical waveguide photodiodes to 30 GHz while maintaining good external responsivity (0.5 A/W), high 1-dB compression current (> 25 mA), and high linearity
Autor:
Michael W. Geis, Mark A. Hollis, Charles H. Wuorio, Theodore H. Fedynyshyn, Joseph O. Varghese, Shireen Warnock, Travis C. Wade, Bradley Duncan, Steven A. Vitale, Maxwell E. Plaut
Publikováno v:
physica status solidi (a). 215:1870050
Autor:
Shireen Warnock, Travis C. Wade, Bradley Duncan, Michael W. Geis, Mark A. Hollis, Steven A. Vitale, Maxwell E. Plaut, Joseph O. Varghese, Theodore H. Fedynyshyn, Charles H. Wuorio
Publikováno v:
physica status solidi (a). 215:1800681
Autor:
Umesh K. Mishra, Robert Kaplar, Kenneth A. Jones, Siddharth Rajan, N. M. Johnson, C. L. Chua, Masataka Higashiwaki, Muhammad Asif Khan, Michael E. Coltrin, Srabanti Chowdhury, Jacob H. Leach, Robert C. N. Pilawa-Podgurski, Samuel Graham, Andrew D. Koehler, Ramon Collazo, M. S. Islam, Jeffrey Y. Tsao, Timothy A. Grotjohn, Robert J. Nemanich, Jerry A. Simmons, Zlatko Sitar, Jeffrey B. Shealy, Marko J. Tadjer, Enrico Bellotti, C. G. Van de Walle, Michael Wraback, Mark A. Hollis, Arthur F. Witulski, Keith R. Evans, J. A. Cooper, Debdeep Jena, Eric R. Heller, P. W. Juodawlkis
Publikováno v:
Advanced Electronic Materials. 4:1600501