Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Mark A. Gesley"'
Publikováno v:
Label-free Biomedical Imaging and Sensing (LBIS) 2019.
Autor:
Juan R. Maldonado, B. DeVore, M. R. Scheinfein, Douglas E. Holmgren, Bassam Shamoun, Timothy N. Thomas, Xiaolan Chen, Mark A. Gesley, Ming Yu, Steven T. Coyle
Publikováno v:
SPIE Proceedings.
A raster multibeam lithography tool is in Etec’s roadmap to meet the stringent requirements of sub 100 nm mask fabrication. The tool leverages the long experience obtained with the ALTA laser pattern generators and the high resolution capabilities
Autor:
Frederick Raymond, B.J. Marleau, Frank E. Abboud, Mark A. Gesley, Tom Newman, Olivier Toublan, Jan M. Chabala
Publikováno v:
SPIE Proceedings.
MEBESR 50 kV mask pattern generators use Raster GraybeamTM writing, providing an effective grid that is 32X finer than the print grid. The electron beam size and print pixel size are variable between 60 nm and 120 nm, allowing a tradeoff between reso
Publikováno v:
SPIE Proceedings.
It is commonly accepted in the semiconductor industry that optical lithography will be the most cost-effective solution for 150 nm and 130 nm device generations. Some selected layers at the 130 nm device generation may be produced using electron-beam
Autor:
Frederick Raymond, Ulrich Hofmann, John Raphael, W. Eckes, Robert L. Dean, Charles A. Sauer, Frank E. Abboud, Wayne Phillips, M. Pastor, Janine J. Doering, Mark A. Gesley, Robert J. Naber, Terry Mulera
Publikováno v:
SPIE Proceedings.
Etec Systems, Inc. has developed a new e-beam mask lithography system, the MEBES 4500S, featuring a higher productivity writing strategy called multipass gray and a number of mechanical and electrical improvements. This new system, based on the prove
Autor:
Zoilo C. H. Tan, Terry Mulera, C. Nurmi, Mark A. Gesley, J. Radley, Allan L. Sagle, Lee H. Veneklasen, Keith P. Standiford, John R. Thomas
Publikováno v:
SPIE Proceedings.
Performance data from a prototype 50 kV shaped electron-beam (e-beam) pattern generator is presented. This technology development is targeted towards 180-130 nm device design rules. It will be able to handle 1X NIST X-ray membranes, glass reduction r
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3025
A unique approach to photocathode operation is described in this article. We utilize a relatively large bandgap CsBr photocathode material that under normal conditions would not photoemit with radiation energy less than the bandgap plus the work func
Autor:
Steven T. Coyle, Bassam Shamoun, B. DeVore, X. Chen, M. R. Scheinfein, D. Holmgren, Timothy N. Thomas, Juan R. Maldonado, Ming Yu, Mark A. Gesley
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:501
A prototype raster multibeam optics is evaluated for 45 nm mask pilot lithography. A laser beam is split into 32 beamlets, which are modulated acousto-optically then focused onto a photocathode. This generates 32 electron beams which are scanned and
Autor:
Steven T. Coyle, A. Sagle, Bassam Shamoun, Juan R. Maldonado, D. Holmgren, X. Chen, Mark A. Gesley, Timothy N. Thomas, P. Allen
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2657
A prototype raster multibeam lithography tool was constructed and is being evaluated for use as a mask writer at the 50 nm node. The photocathode illumination module (PIM) focuses a linear brush of 32 individually modulated laser beams into 300 nm fu
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:3563
Critical dimension (CD) control for isolated lines has been experimentally studied as a function of aerial image slope and proximity effects on a photomask. The aerial image slope was controlled by defocusing a 50 kV shaped beam. Isolated crosses of