Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Marjorie Hesse"'
Autor:
Frederique Trenteseaux, Francesco La Rosa, Vincenzo Della Marca, Franck Melul, Arnaud Regnier, Marjorie Hesse, Madjid Akbal, Stephan Niel, Pierre Laine, Marc Bocquet, M. Mantelli
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2021, 126, pp.114266. ⟨10.1016/j.microrel.2021.114266⟩
Microelectronics Reliability, 2021, 126, pp.114266. ⟨10.1016/j.microrel.2021.114266⟩
International audience; In this paper, we present an experimental study of a new architecture of the embedded Select in Trench Memory (eSTM™) cell. A first part is dedicated to a deep analysis of the overlap eSTM TM behaviour. A key fact is the pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b3b5d2f5593cfd412f8954a43bb3d15
https://hal.science/hal-03596892/document
https://hal.science/hal-03596892/document
Autor:
Thibault Kempf, Jean-Michel Portal, Franck Julien, Arnaud Regnier, Francois Maugain, Stephan Niel, M. Mantelli, Pascal Masson, Jean-Michel Moragues, Marjorie Hesse, Vincenzo Della Marca
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW)
2017 IEEE International Integrated Reliability Workshop (IIRW), Oct 2017, Fallen Leaf Lake, CA, United States
2017 IEEE International Integrated Reliability Workshop (IIRW), Oct 2017, Fallen Leaf Lake, CA, United States
The impact of CMOS post nitridation annealing (PNA) temperature on a 40nm embedded Flash reliability is studied. Electrical characterizations of the Flash tunnel oxide are carried out on single cell. These are used to explain the better results in te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49daefc66af2c0c78f5fc1bb42689b46
https://doi.org/10.1109/iirw.2017.8361234
https://doi.org/10.1109/iirw.2017.8361234
Publikováno v:
J3eA. 16:1003
Ce papier decrit le developpement des prochaines generations de memoires non volatiles (NVM). Ce travail se focalise dans un premier temps sur un rappel des technologies memoires embarquees dites classiques, intervenant sur de nombreuses applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a02caf27f214d19b1b301893d196bf5
https://doi.org/10.1051/j3ea/20171003
https://doi.org/10.1051/j3ea/20171003