Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Marjorie A, Olmstead"'
Autor:
Fumio S. Ohuchi, Benjamin W. Krueger, Evan M. Nelson, Christopher S. Dandeneau, Scott T. Dunham, Marjorie A. Olmstead
Publikováno v:
Journal of the American Ceramic Society. 99:2467-2473
Single-phase monoclinic aluminum–gallium oxide powders, β−(AlxGa1−x)2O3, have been produced by solution combustion synthesis for Al fraction 0 ≤ x
Autor:
Marjorie A. Olmstead, Fumio S. Ohuchi, Patrick J. Shamberger, Kenneth M. Beck, Alan G. Joly, Chill-Yuan Lu, Esmeralda N. Yitamben
Publikováno v:
Applied Physics A. 93:93-98
Phase transformation of thin film (∼30 nm)In2Se3/Si(111) (amorphous→crystalline) was performed by resistive annealing and the reverse transformation (crystalline→amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, b
Publikováno v:
Physical Review B. 61:7215-7218
Deposition of Se and GaSe on $\mathrm{Si}(111)7\ifmmode\times\else\texttimes\fi{}7$ surfaces was studied with low-energy electron diffraction, x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction to probe initial nucleation and inter
Publikováno v:
Scopus-Elsevier
We have studied diffusion of Ge into subsurface layers of Si(100). Auger electron diffraction measurements show Ge in the fourth layer after submonolayer growth at temperatures as low as 500 degrees C. Density functional theory predictions of equilib
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2376-2380
We have investigated the growth of GaSe, a layered semiconductor, on single crystal Al2O3(0001)(sapphire), an ionic crystal. We have used reflection high energy electron diffraction, x-ray photoelectron spectroscopy, and transmission electron microsc
Publikováno v:
Physical Review B. 53:1584-1593
Bulk and interface photoemission satellite excitations, measured with x-ray photoelectron spectroscopy and x-ray photoelectron diffraction, are compared for thick, thin, and monolayer films of ${\mathrm{CaF}}_{2}$ and ${\mathrm{SrF}}_{2}$ on Si(111).
Publikováno v:
Physical Review Letters. 75:2380-2383
The thickness uniformity and the spatial distribution of lattice relaxation in thin ( $l$8 nm) Ca${\mathrm{F}}_{2}$/Si(111) films, observed with photoelectron spectroscopy and transmission electron microscopy, are seen to depend strongly on the initi
Publikováno v:
Physical Review B. 51:5352-5365
Kinetic variations of the initial stages of CaF[sub 2] growth on Si(111) by molecular-beam epitaxy are studied with the [ital in] [ital situ] combination of x-ray photoelectron spectroscopy and diffraction. After the formation of a chemically reacted
Publikováno v:
Physical Review B. 50:11052-11069
Using x-ray-photoelectron spectroscopy and Auger-electron spectroscopy, we have resolved surface, bulk, and interface Ca and F core-level emission in thin films (3--8 triple layers) of CaF[sub 2] and SrF[sub 2] on Si(111). We confirmed these assignme
Publikováno v:
Physical Review B. 83
The growth and phase segregation properties of the potential dilute magnetic semiconductor alloy (MnSe)${}_{x}$(Ga${}_{2/3}$Se)${}_{1\ensuremath{-}x}$ are studied as a function of thickness, Mn concentration, postgrowth annealing, and the presence or