Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Mariusz Rudziński"'
Autor:
Ewelina B. Możdżyńska, Sebastian Złotnik, Paweł Ciepielewski, Jarosław Gaca, Marek Wójcik, Paweł P. Michałowski, Krzysztof Rosiński, Karolina Piętak, Mariusz Rudziński, Elżbieta Jezierska, Jacek M. Baranowski
Publikováno v:
Journal of Materials Science. 57:7265-7275
Autor:
Sebastian Złotnik, Jaroslaw Gaca, Karolina Piętak, Paweł Piotr Michałowski, Ewelina Rozbiegała, Marek Wojcik, Mariusz Rudziński
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:17892-17902
Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-do
Autor:
Sebastian Złotnik, Jakub Sitek, Jaroslaw Gaca, Paweł Piotr Michałowski, Krzysztof Rosiński, Mariusz Rudziński, Marek Wojcik
Publikováno v:
Applied Surface Science. 488:688-695
III-nitride materials, such as ternary alloys of gallium nitride (GaN) and aluminum nitride (AlN), are the prominent semiconductor systems in research and industry due to their importance for optoelectronic applications using ultraviolet (UV) spectra
Autor:
Łukasz Janicki, Ryszard Korbutowicz, Mariusz Rudziński, Paweł Piotr Michałowski, Sebastian Złotnik, Miłosz Grodzicki, Sandeep Gorantla, Jarosław Serafińczuk, Detlef Hommel, Robert Kudrawiec
Publikováno v:
Applied Surface Science. 598:153872
Autor:
Adrianna Chamryga, Paweł Piotr Michałowski, Iwona Jóźwik, Mariusz Rudziński, Sebastian Złotnik
Publikováno v:
Journal of visualized experiments : JoVE. (158)
The presented protocol combines excellent detection limits (1 ppm to 1 ppb) using secondary ion mass spectrometry (SIMS) with reasonable spatial resolution (~1 µm). Furthermore, it describes how to obtain realistic three-dimensional (3D) distributio
Publikováno v:
Chemical communications (Cambridge, England). 55(77)
Further development of gallium nitride (GaN) based optoelectronic devices requires in-depth understanding of the defects present in GaN grown on a sapphire substrate. In this work, we present three dimensional secondary ion mass spectrometry (SIMS) d
Publikováno v:
PRZEGLĄD ELEKTROTECHNICZNY. 1:116-118
Autor:
Krzysztof Rosiński, Mariusz Rudziński, Sebastian Złotnik, Jakub Sitek, Paweł Piotr Michałowski
Publikováno v:
Physical chemistry chemical physics : PCCP. 20(20)
Further development of GaN/AlGaN based optoelectronic devices requires optimization of the p-type material growth process. In particular, uncontrolled diffusion of Mg dopants may decrease the performance of a device. Thus it is meaningful to study th
Autor:
Artur P. Herman, Lukasz Janicki, Hubert S. Stokowski, Mariusz Rudzinski, Ewelina Rozbiegala, Marta Sobanska, Zbigniew R. Zytkiewicz, Robert Kudrawiec
Publikováno v:
Advanced Materials Interfaces, Vol 7, Iss 21, Pp n/a-n/a (2020)
Abstract Graphene together with other 2D nanomaterials, due to their exceptional physiochemical properties, are often considered as excellent building blocks for fabrication of more complex heterostructures. Despite the processing‐related issues th
Externí odkaz:
https://doaj.org/article/29cb08d44fcd466fa3da3bcd35b88fd5
Autor:
Robert Oliva, Szymon J Zelewski, Łukasz Janicki, Katarzyna R Gwóźdź, Jarosław Serafińczuk, Mariusz Rudziński, Ekmel Özbay, Robert Kudrawiec
Publikováno v:
Semiconductor Science & Technology; Mar2018, Vol. 33 Issue 3, p1-1, 1p