Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Marius Tybjerg"'
Autor:
J. Patrick Flint, Mark J. Furlong, Brian Smith, Becky Martinez, Shanmugam Aravazhi, Marius Tybjerg, Gordon Dallas
Publikováno v:
Infrared Technology and Applications XLIII.
In this paper we report on the maturation of large diameter GaSb and InSb substrate production and the key aspects of product quality and process control that have enabled a level of standardization to be achieved that is on par with mass produced co
Autor:
Amy W. K. Liu, Rebecca Martinez, Joel M. Fastenau, Dmitri Lubyshev, Marius Tybjerg, Mark J. Furlong, Patrick Flint
Publikováno v:
Infrared Technology and Applications XLII.
Gallium Antimonide (GaSb) is an important Group III-V compound semiconductor which is suitable for use in the manufacture of a wide variety of optoelectronic devices such as infra-red (IR) focal plane detectors. A significant issue for the commercial
Autor:
Dmitri Lubyshev, Amy W. K. Liu, Ying Wu, Andrew Mowbray, Rebecca Martinez, Brian Smith, Mark J. Furlong, Joel M. Fastenau, Yueming Qiu, Marius Tybjerg
Publikováno v:
SPIE Proceedings.
The GaSb-based 6.1 A lattice constant family of materials and heterostructures provides rich bandgap engineering possibilities and have received considerable attention for their potential and demonstrated performance in infrared (IR) detection and im
Publikováno v:
SPIE Proceedings.
In this paper we report on an industry first; the commercial growth and characterization of >/=6" diameter GaSb substrates that are suitable for use in the fabrication of epitaxially grown, large area MWIR-VLWIR detectors. Results will be presented o
Publikováno v:
SPIE Proceedings.
Gallium antimonide (GaSb) is an important Group III-V compound semiconductor for infra-red (IR) photodetectors used in sensing and imaging applications. Operating in the mid (3-5 μm) to long wavelength region (8-12 μm) of the IR spectrum, the appli