Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Marius TREIDERIS"'
Autor:
Algimantas Lukša, Virginijus Bukauskas, Viktorija Nargelienė, Marius Treideris, Martynas Talaikis, Algirdas Selskis, Artūras Suchodolskis, Arūnas Šetkus
Publikováno v:
Crystals, Vol 13, Iss 8, p 1243 (2023)
Unique electronic properties of graphene offer highly interesting ways to manipulate the functional properties of surfaces and develop novel structures which are sensitive to physical and chemical interactions. Nano-crystalline graphene is frequently
Externí odkaz:
https://doaj.org/article/ec42e572b40447488fb2c82b6b38eb4d
Autor:
Ignas Grigelionis, Vladislovas Čižas, Mindaugas Karaliūnas, Vytautas Jakštas, Kȩstutis Ikamas, Andrzej Urbanowicz, Marius Treideris, Andrius Bičiūnas, Domas Jokubauskis, Renata Butkutė, Linas Minkevičius
Publikováno v:
Sensors, Vol 23, Iss 10, p 4600 (2023)
We report on the experimental evidence of thermal terahertz (THz) emission tailored by magnetic polariton (MP) excitations in entirely GaAs-based structures equipped with metasurfaces. The n-GaAs/GaAs/TiAu structure was optimized using finite-differe
Externí odkaz:
https://doaj.org/article/32facd91444e4156b43745be0f0b5562
Autor:
Marius Treideris, Virginijus Bukauskas, Alfonsas Rėza, Irena Šimkienė, Arūnas Šetkus, Andrius Maneikis, Viktorija Strazdienė
Publikováno v:
Medžiagotyra, Vol 21, Iss 1, Pp 3-6 (2015)
Macroporous silicon light trapping layers on the surface of p-type substrates were manufactured by using electrochemical etching. Optical measurements have shown the decreased optical reflection as compared to bulk silicon. The p-n junction was forme
Externí odkaz:
https://doaj.org/article/e13a78ab93d446e59379336e4b7e7947
Autor:
Neringa Samuoliene, Jonas Gradauskas, Algirdas Sužiedelis, Marius Treideris, Viktoras Vaičikauskas
Publikováno v:
Medžiagotyra, Vol 21, Iss 2, Pp 179-181 (2015)
A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the v
Externí odkaz:
https://doaj.org/article/8db3efb445f847dd903ead57b8389b50
Autor:
Marius TREIDERIS, Virginijus BUKAUSKAS, Alfonsas RĖZA, Irena ŠIMKIENĖ, Arūnas ŠETKUS, Andrius MANEIKIS
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 144-146 (2014)
Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from bor
Externí odkaz:
https://doaj.org/article/a074ad7f44144b74b05c54203154259e
Autor:
Algimantas Lukša, Vladimir Astachov, Saulius Balakauskas, Virginijus Bukauskas, Mindaugas Kamarauskas, Artūras Suchodolskis, Marius Treideris, Martynas Talaikis, Arūnas Šetkus
Publikováno v:
Surfaces and Interfaces. 36:102508
Autor:
Arūnas Šetkus, Alfonsas Rėza, Marius Treideris, Mindaugas Kamarauskas, Viktorija Strazdienė, A. Mironas, Vladimir Agafonov
Publikováno v:
Lithuanian Journal of Physics. 60
Here we present a study of the nickel-assisted etching applied to form uniform black silicon layers on crystalline silicon substrates. We related the parameters used for technological process control (etchant, nickel thickness) to parameters of the o
Publikováno v:
physica status solidi (a). 210:2617-2621
Excited state relaxation and energy transfer in porous silicon (PS)/laser dye [oxazine 1 (Ox1), rhodamine 6G (Rh6G)] composites have been studied by means of steady-state and time-resolved fluorescence. Fluorescence decay kinetics reveals the nonradi
Autor:
Virginijus Bukauskas, R. Szymczak, Gediminas Niaura, Marius Treideris, Pavlo Aleshkevych, A. Rėza, Irena Šimkienė, Irmantas Kašalynas, Gintautas Jurgis Babonas
Publikováno v:
Materials Chemistry and Physics. 130:1026-1032
Iron and iron oxide nanoparticles in silica layers deposited by sol–gel techniques on Si wafers were formed and studied. It was shown that multifunctional nanoparticles of different iron oxides possessing various physical properties can be fabricat
Autor:
Marius Treideris, Gintautas Jurgis Babonas, Irmantas Kašalynas, Irena Šimkienė, Algirdas Selskis
Publikováno v:
Lithuanian Journal of Physics. 51:341-344
The reflectance of GaP nanorods on GaP substrates was investigated in the frequency range of 300–500 cm –1 by Fourier transform infrared (FTIR) reflectance spectroscopy. GaP nanorods were fabricated by the anodic electrochemical etching technique