Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Marius Sergent"'
Autor:
Wouter De Cock, Marius Sergent, Sébastien Rolando, Marco Van Uffelen, Timothe Allanche, Said Bounasser, Aziouz Chabane, Vincent Goiffon, Pierre Magnan, Laura Mont Casellas, Robin Scott, Claude Marcandella, Franck Corbière, Serena Rizzolo, Olivier Marcelot, Marc Gaillardin, Magali Estribeau, Sylvain Girard, Philippe Paillet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2018, 65 (1), pp.101-110. ⟨10.1109/TNS.2017.2765481⟩
IEEE Transactions on Nuclear Science, 2018, 65 (1), pp.101-110. ⟨10.1109/TNS.2017.2765481⟩
Total ionizing dose effects are studied on a radiation hardened by design (RHBD) $256\times 256$ -pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X- and $\gamma $ -ray irradiations. The (color) imaging capabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e1fb54d0e2da0339b05b31fa6383370
https://ujm.hal.science/ujm-01964819
https://ujm.hal.science/ujm-01964819
Autor:
Sébastien Rolando, Serena Rizzolo, Marco Van Uffelen, Laura Mont Casellas, Sylvain Girard, Philippe Paillet, Robin Scott, Claude Marcandella, Wouter De Cock, Marius Sergent, Franck Corbière, Pierre Magnan, Aziouz Chabane, Vincent Goiffon
Publikováno v:
Proceedings of the Radiations Effects on Components and Systems (RADECS)
Radiations Effects on Components and Systems (RADECS)
Radiations Effects on Components and Systems (RADECS), Oct 2017, Geneva, Switzerland. pp.1-4
RADECS 2017 : Radiation and Its Effects on Components and Systems
RADECS 2017 : Radiation and Its Effects on Components and Systems, Oct 2017, Genève, Switzerland
Radiations Effects on Components and Systems (RADECS)
Radiations Effects on Components and Systems (RADECS), Oct 2017, Geneva, Switzerland. pp.1-4
RADECS 2017 : Radiation and Its Effects on Components and Systems
RADECS 2017 : Radiation and Its Effects on Components and Systems, Oct 2017, Genève, Switzerland
International audience; MOSFETs variability in irradiated CIS up to 10 MGy (SiO2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e3b1c113f50cd7981e25f0e3262e100
https://hal.science/hal-02092843/file/Rizzolo_22907.pdf
https://hal.science/hal-02092843/file/Rizzolo_22907.pdf