Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Marius K. Orlowski"'
Three-Dimensional Neuromorphic Computing System With Two-Layer and Low-Variation Memristive Synapses
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:400-409
Three-dimensional Integrated Circuits (3D-ICs) is a cutting-edge design methodology of placing the circuitry vertically aiming for a high-speed and energy-efficient system with the smallest design area. In this paper, a novel 3D neuromorphic system i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42c6902f32179cb98cf01d8a0b91bdf
https://doi.org/10.1109/tcad.2021.3061481
https://doi.org/10.1109/tcad.2021.3061481
Autor:
Marius K. Orlowski, Mohammad Al-Mamun
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Scientific Reports
Scientific Reports
Nanowires, atomic point contacts, and chains of atoms are one-dimensional nanostructures, which display size-dependent quantum effects in electrical and thermal conductivity. In this work a Cu nanofilament of a defined resistance and formed between a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::005b6cafae5c81d3f2ac5cc9a6ffd803
https://doaj.org/article/3abf624f70284894a490e7737aa764af
https://doaj.org/article/3abf624f70284894a490e7737aa764af
Autor:
Marius K. Orlowski, Mohammad Al-Mamun
Publikováno v:
MRS Advances. 4:2593-2600
Frequent switching of resistive memory cell may lead to a local accumulation of Joules heat in the device. Since the ReRAM cells are arranged in crossbar arrays with the two electrodes running perpendicular to each other, the heat generated in one de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827f543b2e5e47d4215cf4f3e1fa9813
https://doi.org/10.1557/adv.2019.265
https://doi.org/10.1557/adv.2019.265
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:N220-N233
A good candidate for replacing the inert platinum (Pt) electrode in the well-behaved Cu/TaOx/Pt resistive RAM memory cell is ruthenium (Ru), already successfully deployed in the CMOS back end of line. We benchmark Cu/TaOx/Ru device against Cu/TaOx/Pt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8778c6188747f673dc13b9187f8b2d6
https://doi.org/10.1149/2.0121912jss
https://doi.org/10.1149/2.0121912jss
Autor:
Junqing Fan, C.H. de Groot, John F. Conley, Gargi Ghosh, Rizwan Ali, Ye Fan, Marius K. Orlowski, Sean W. King, Liudi Jiang, Dustin Z. Austin, Melanie A. Jenkins
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:N159-N185
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::467134af50f3a93c470f51fe7d42b514
https://doi.org/10.1149/2.0161910jss
https://doi.org/10.1149/2.0161910jss
Publikováno v:
ISQED
The information communicating among neurons in Spiking Neural Networks (SNNs) is represented as spiking signals. The outstanding energy efficiency of SNNs stems from the minimal computational cost on the nonlinear calculations of the neurons and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d605adeb0c823c2c46509657e58ddd
https://doi.org/10.1109/isqed51717.2021.9424303
https://doi.org/10.1109/isqed51717.2021.9424303
Autor:
Matthew V. Metz, James S. Clarke, Mauro J. Kobrinsky, J. Bielefeld, Ramanan V. Chebiam, Marius K. Orlowski, Sean W. King, Carl H. Naylor, S. Vyas, John J. Plombon, R. Thapa, Vamseedhara Vemuri, James M. Blackwell, Ye Fan, David J. Michalak, Florian Gstrein, Nicholas C. Strandwitz, Michelle M. Paquette
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27238ad25a90f959569d7043165c8afd
https://doi.org/10.1109/iedm13553.2020.9371942
https://doi.org/10.1109/iedm13553.2020.9371942
Autor:
Marius K. Orlowski, Mohammad Al-Mamun
Publikováno v:
Electronics
Volume 9
Issue 1
Electronics, Vol 9, Iss 1, p 127 (2020)
Volume 9
Issue 1
Electronics, Vol 9, Iss 1, p 127 (2020)
When a memory cell of a Resistive Random Access Memory (ReRAM) crossbar array is switched repeatedly, a considerable amount of Joule heat is dissipated in the cell, and the heat may spread to neighboring cells that share one of the electrode lines wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dd5505ed8ea76fbd873e258a3a74b6a
https://hdl.handle.net/10919/96375
https://hdl.handle.net/10919/96375
Autor:
Marius K. Orlowski, Mohammad Al-Mamun
Publikováno v:
Prime Archives in Electronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06ee9aa824b4f73ef465ad64fb9c4067
https://doi.org/10.37247/paelec.1.2020.3
https://doi.org/10.37247/paelec.1.2020.3
Autor:
Tukaram D. Dongale, M. M. Karanjkar, Sachin A. Pawar, Girish U. Kamble, Dipali S. Patil, Rajanish K. Kamat, Nitin P. Shetake, Marius K. Orlowski, A.M. Teli, Suhas D. Yadav, Pramod S. Patil, Jae C. Shin
Publikováno v:
International Nano Letters, Vol 8, Iss 4, Pp 263-275 (2018)
In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO2/SS thin film metal–insulator–metal device. The voltage-induced resistive switching l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41f4981a2cf27e903e4a3546b8fde041
https://doi.org/10.1007/s40089-018-0249-z
https://doi.org/10.1007/s40089-018-0249-z