Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Marios Barlas"'
Autor:
Célestin Doyen, Stéphane Ricq, Pierre Magnan, Olivier Marcelot, Marios Barlas, Sébastien Place
Publikováno v:
Sensors, Vol 20, Iss 1, p 287 (2020)
A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extr
Externí odkaz:
https://doaj.org/article/a25555557b15474299abb7fb138e3158
Autor:
Marios Barlas, Axel Crocherie, Felix Bardonnet, Quentin Abadie, Elodie Sungauer, Matteo Vignetti, Bastien Mamdy, Isobel Nicholson, Patrick Gros d'Aillon, Raul-Andres Bianchi, Gabriel Mugny, Dominique Golanski, Florian Domengie, Pascal Besson, Emilie Prevost, Linda Parmigiani, Jihane Arnaud, Helene Wehbe-Alause, Arnaud Tournier, Olivier Noblanc, Krysten Rochereau
Publikováno v:
Integrated Optics: Devices, Materials, and Technologies XXVI.
Publikováno v:
Optical Design and Engineering VIII.
Due to their low-cost fabrication process and high efficiency, silicon-based Complementary Metal Oxide Semiconductor (CMOS) image sensors are the reference in term of detection in the visible range. However, their optical performances are toughly deg
Autor:
Sébastien Place, Pierre Magnan, Stéphane Ricq, Olivier Marcelot, Célestin Doyen, Marios Barlas
Publikováno v:
Sensors
Sensors, MDPI, 2020, 20 (1), pp.287. ⟨10.3390/s20010287⟩
Sensors, Vol 20, Iss 1, p 287 (2020)
Sensors (Basel, Switzerland)
Volume 20
Issue 1
Sensors, MDPI, 2020, 20 (1), pp.287. ⟨10.3390/s20010287⟩
Sensors, Vol 20, Iss 1, p 287 (2020)
Sensors (Basel, Switzerland)
Volume 20
Issue 1
International audience; A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a6b80e7bf7405eaf879c8d3daa5fd50
https://hal.archives-ouvertes.fr/hal-03040611/document
https://hal.archives-ouvertes.fr/hal-03040611/document
Autor:
Etienne Nowak, Subhasish Mitra, Tony F. Wu, Edith Beigne, Elisa Vianello, Binh Quang Le, Alessandro Grossi, Marios Barlas, Cristian Zambelli, Mary Wootters, Mohamed M. Sabry, Laurent Grenouillet, Jean Coignus
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using thorough endurance tests that incorporate fine-grained read operations at the array level, we quantify for the first time temporary write failures (TWF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91cb0a97711daa020f03637e06e09548
http://hdl.handle.net/11392/2403640
http://hdl.handle.net/11392/2403640
Autor:
Jury Sandrini, Maxime Thammasack, Michele De Marchi, Pierre-Emmanuel Gaillardon, Tugba Demirci, Yusuf Leblebici, Marios Barlas, Giovanni De Micheli, Davide Sacchetto
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:339-351
This work presents the co-integration of resistive random access memory crossbars within a 180 nm Read-Write CMOS chip. $ {\rm TaO}_{ {\rm x}}$ -based ReRAMs have been fabricated and characterized with materials and process steps compatible with the
Autor:
Francis Balestra, Frederic Boeuf, Arthur Arnaud, L. Gaben, Thomas Skotnicki, C. Vizioz, Stephane Monfray, J.M. Hartmann, Marios Barlas, S. Barraud, Christian Arvet, M.-P. Samson, M. Vinet
Publikováno v:
2016 SNW proceedings
2016 Silicon Nanoelectronics Workshop (SNW)
2016 Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.136-137, ⟨10.1109/SNW.2016.7578020⟩
2016 Silicon Nanoelectronics Workshop (SNW)
2016 Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.136-137, ⟨10.1109/SNW.2016.7578020⟩
session 8: advanced CMOS and New Devices Concepts; International audience; Stacked Nanowires FETs are proposed to replace FinFET and FDSOI for sub-7nm nodes. While most studies demonstrate the performances gain offered by such structures, mechanical
Publikováno v:
2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).
In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteri