Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Marion Croisy"'
Autor:
Marion Croisy
Écrit dans les années 1840 par l’ouvrier Gabriel Gauny, « Aux ouvriers constructeurs de prisons cellulaires » fournit un témoignage inédit sur l’adoption du régime cellulaire en France. Dans ce texte qui tient à la fois de l’enquête
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bbc66118d6bd0f01d203de9440a2a2f
http://journals.openedition.org/aes/4217
http://journals.openedition.org/aes/4217
Autor:
Nicolas Posseme, Sylvain Joblot, Cécile Jenny, Denis Guiheux, Alain Campo, Erwine Pargon, Marion Croisy, C. Richard
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
International audience; Dry strip processes performed after implantation steps have to remove efficiently the photoresist mask protecting the non-implanted area without leaving any defects on the substrate. In this study bubble-like defects called bl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ca24b8a1bfd4d0517213bee595909a
https://doi.org/10.1016/j.mee.2018.03.001
https://doi.org/10.1016/j.mee.2018.03.001
Autor:
Denis Guiheux, Erwine Pargon, Marion Croisy, Nicolas Posseme, C. Richard, Cécile Jenny, Alain Campo
Publikováno v:
Solid State Phenomena
Solid State Phenomena, 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop, May 2016, Grenoble, France
Solid State Phenomena, Trans Tech Publications Ltd 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019, May 2016, Grenoble, France. ⟨10.4028/www.scientific.net/SSP.255.111⟩
Solid State Phenomena, 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop, May 2016, Grenoble, France
Solid State Phenomena, Trans Tech Publications Ltd 2016, 255, pp.111-116. ⟨10.4028/www.scientific.net/SSP.255.111⟩
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019
9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019, May 2016, Grenoble, France. ⟨10.4028/www.scientific.net/SSP.255.111⟩
With the increase of implantation dose in new technologies, implanted photoresist stripping is even more challenged in terms of efficiency and substrate consumption. In this work, the effect of implantation parameters (energy and implanted specie) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::285861a3d11ad9938b30ed076861d74d
https://doi.org/10.4028/www.scientific.net/ssp.255.111
https://doi.org/10.4028/www.scientific.net/ssp.255.111
Autor:
Cécile Jenny, Erwine Pargon, Denis Mariolle, Marion Croisy, C. Richard, Nicolas Posseme, Denis Guiheux, Christophe Poulain, Alain Campo
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2018, 36 (1), pp.011201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (1), pp.011201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2018, 36 (1), pp.011201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (1), pp.011201
Alternative approaches are now required to fulfill the strict requirements of photoresist (PR) dry strip process after high-dose implantation. A better understanding of the PR degradations induced by the ion bombardment during the implantation is thu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1267dbc23a3e5c00c220a34b769336a
https://hal.univ-grenoble-alpes.fr/hal-01942735
https://hal.univ-grenoble-alpes.fr/hal-01942735