Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Mario Saggio"'
Autor:
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio
ICSCRM 2015Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Autor:
Patrick Fiorenza, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Publikováno v:
Materials Science Forum. 1090:113-117
In this paper, the effect of different post oxide deposition nitridation processes in NO on n-channel lateral MOSFETs fabricated on implanted 4H-SiC were investigated. In particular, the electrical behavior of the MOSFETs was deeply investigated not
Autor:
Patrick Fiorenza, Corrado Bongiorno, A. Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Publikováno v:
Materials Science Forum. 1062:160-164
Silicon dioxide (SiO2) layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in lateral implanted
Publikováno v:
Materials Science Forum. 1004:671-679
In this paper, we report on the simulation results of instability threshold voltage of SiC MOSFET device. Hysteresis cycles of threshold voltage suggest that trapping and detrapping phenomena of electrons from the SiC layer into the oxide traps occur
Autor:
Edoardo Zanetti, Clarice Di Martino, Fabrizio Roccaforte, Mario S. Alessandrino, Mario Saggio, Alfio Russo, Carlo Venuto, Patrick Fiorenza, B. Carbone, Corrado Bongiorno, Filippo Giannazzo
Publikováno v:
Materials Science Forum
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Publikováno v:
Materials Science Forum. 963:230-235
This paper aims to give an overview on some relevant aspects of the characterization of the SiO2/4H-SiC interface, considering the properties of this system both at the interface and inside the insulator. Nanoscale scanning probe microscopy (SPM) tec
Publikováno v:
Materials Science Forum
The aim of this paper is to analyze the SiC MOSFETs behavior under short circuit tests (SCT). In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions
Autor:
Alfio Russo, C. Venuto, Edoardo Zanetti, E. Vitanza, Patrick Fiorenza, C. Bottari, C. Di Martino, Mario S. Alessandrino, S. Adamo, Fabrizio Roccaforte, B. Carbone, Mario Saggio, Filippo Giannazzo
Publikováno v:
IRPS
In this work, the breakdown of 4H-SiC MOSFETs was correlated with the presence of different crystalline defects in the 4H-SiC epitaxial layer. First, in a wafer level characterization, the devices not working at t = 0 s showed the presence of down-fa
Autor:
Mario Saggio, Salvatore Cascino, N. Bentivegna, Daniela Cavallaro, Edoardo Zanetti, Mario Pulvirenti
Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
The aim of this paper is to analyze the SiC MOSFETs behavior under repetitive short circuit tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different condit
Publikováno v:
Applied Physics Letters