Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mario M. Bokatius"'
Autor:
Hussain H. Ladhani, Jeffrey K. Jones, Mario M. Bokatius, Abdulrhman M. S. Ahmed, Paul R. Hart, Joseph Gerard Schultz, J. Babesku
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
In this paper we demonstrate high gain, high efficiency, single and balanced Doherty power amplifiers (PAs) that have the ability to transmit signals which occupy the full frequency band from 1930MHz–1995MHz. The PAs have been designed using a new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cd0180c386d693ddeeb3178ac75ec7
https://doi.org/10.1109/mwsym.2012.6259579
https://doi.org/10.1109/mwsym.2012.6259579
Publikováno v:
2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.
This paper proposes the calculation of memory residual (MR) and adjacent channel power ratio (ACPR) as figures-of-merit (FOM) for the analysis of linearizability of a high power RF Doherty amplifier circuit. Two-tone and wideband code division multip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb04ba10bde9a0fb3618753a11443abb
https://doi.org/10.1109/pawr.2012.6174912
https://doi.org/10.1109/pawr.2012.6174912
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
In this paper we describe the design and measured performance of a Doherty power amplifier constructed using two-stage power amplifier IC building blocks. The Doherty PA was designed for single- and multi-carrier GSM applications in the 1800 MHz band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b360b0151b27d8dfbd3e75e3aee3398
https://doi.org/10.1109/mwsym.2009.5165937
https://doi.org/10.1109/mwsym.2009.5165937
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
The combination of Freescale's production pHEMT process with a self-aligned field plate, creates a device technology that delivers high gain and efficiency while meeting WiMAX linearity requirements. Compared to the standard production process, field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d9696cc94da012626a026380cbcdd84
https://doi.org/10.1109/mwsym.2007.380276
https://doi.org/10.1109/mwsym.2007.380276
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
In order to achieve highest possible gain and lowest input reflection coefficient, a conjugate match at the input of power transistors is desired. Unfortunately, as will be shown in this paper, such an input termination is not adequate for best linea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4f37055d16664e289e49d49bcd3b28
https://doi.org/10.1109/mwsym.2007.380277
https://doi.org/10.1109/mwsym.2007.380277