Zobrazeno 1 - 10
of 248
pro vyhledávání: '"Mario Lanza"'
Autor:
Bo Tian, Junzhu Li, Qingxiao Wang, Abdus Samad, Yue Yuan, Mohamed Nejib Hedhili, Arun Jangir, Marco Gruenewald, Mario Lanza, Udo Schwingenschlögl, Torsten Fritz, Xixiang Zhang, Zheng Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Ultraflat metal foils are essential for semiconductor nanoelectronics applications and nanomaterial epitaxial growth. Numerous efforts have been devoted to metal surface engineering studies in the past decades. However, various challenges pe
Externí odkaz:
https://doaj.org/article/f4daeddb2c0147ebafa93179b4cc185d
Autor:
Junzhu Li, Abdus Samad, Yue Yuan, Qingxiao Wang, Mohamed Nejib Hedhili, Mario Lanza, Udo Schwingenschlögl, Iwnetim Abate, Deji Akinwande, Zheng Liu, Bo Tian, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Hexagonal boron nitride (hBN), as one of the few two-dimensional insulators, holds strategic importance for advancing post-silicon electronic devices and circuits. Achieving wafer-scale, high-quality monolayer hBN is essential for its integr
Externí odkaz:
https://doaj.org/article/d35e4aa258b944bbb24591e492330775
Autor:
Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabe Linares-Barranco, Sabina Spiga, Sergey Savel’ev, Alexander G. Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J. Joshua Yang, Syed Ghazi Sarwat, Abu Sebastian, Thomas Mikolajick, Stefan Slesazeck, Beatriz Noheda, Bernard Dieny, Tuo-Hung (Alex) Hou, Akhil Varri, Frank Brückerhoff-Plückelmann, Wolfram Pernice, Xixiang Zhang, Sebastian Pazos, Mario Lanza, Stefan Wiefels, Regina Dittmann, Wing H. Ng, Mark Buckwell, Horatio R. J. Cox, Daniel J. Mannion, Anthony J. Kenyon, Yingming Lu, Yuchao Yang, Damien Querlioz, Louis Hutin, Elisa Vianello, Sayeed Shafayet Chowdhury, Piergiulio Mannocci, Yimao Cai, Zhong Sun, Giacomo Pedretti, John Paul Strachan, Dmitri Strukov, Manuel Le Gallo, Stefano Ambrogio, Ilia Valov, Rainer Waser
Publikováno v:
APL Materials, Vol 12, Iss 10, Pp 109201-109201-59 (2024)
Externí odkaz:
https://doaj.org/article/f5e2e018db184cdfa86a6be24ff6f6e6
Autor:
Yue Qin, Hao Guo, Sebastian Pazos, Mengzhen Xu, Xiaobing Yan, Jianzhong Qiao, Jia Wang, Peng Zhou, Yang Chai, Weida Hu, Zhengqiang Zhu, Zhonghao Li, Huanfei Wen, Zongmin Ma, Xin Li, Mario Lanza, Jun Tang, He Tian, Jun Liu
Publikováno v:
Advanced Science, Vol 11, Iss 33, Pp n/a-n/a (2024)
Abstract Multiplexing technology creates several orthogonal data channels and dimensions for high‐density information encoding and is irreplaceable in large‐capacity information storage, and communication, etc. The multiplexing dimensions are con
Externí odkaz:
https://doaj.org/article/e340519f540d433d9455f9a95d0405e4
Autor:
Yue Yuan, Jonas Weber, Junzhu Li, Bo Tian, Yinchang Ma, Xixiang Zhang, Takashi Taniguchi, Kenji Watanabe, Mario Lanza
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with small thickness fluctuations, which is necessary to build electroni
Externí odkaz:
https://doaj.org/article/00cce3f04dc24bc3b0bccf46659728ff
Autor:
Fernando Aguirre, Abu Sebastian, Manuel Le Gallo, Wenhao Song, Tong Wang, J. Joshua Yang, Wei Lu, Meng-Fan Chang, Daniele Ielmini, Yuchao Yang, Adnan Mehonic, Anthony Kenyon, Marco A. Villena, Juan B. Roldán, Yuting Wu, Hung-Hsi Hsu, Nagarajan Raghavan, Jordi Suñé, Enrique Miranda, Ahmed Eltawil, Gianluca Setti, Kamilya Smagulova, Khaled N. Salama, Olga Krestinskaya, Xiaobing Yan, Kah-Wee Ang, Samarth Jain, Sifan Li, Osamah Alharbi, Sebastian Pazos, Mario Lanza
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-40 (2024)
Abstract Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel. The low communication bandwidth between memory and proc
Externí odkaz:
https://doaj.org/article/2747dc5462eb47f38960b290c0cdbb9e
Autor:
Ran Tao, Hakkim Vovusha, Xiaole Li, Ruslan Melentiev, Kaichen Zhu, Mario Lanza, Udo Schwingenschlögl, Amit K. Tevtia, Gilles Lubineau
Publikováno v:
Journal of Materials Research and Technology, Vol 29, Iss , Pp 4384-4393 (2024)
The electroplating of copper layers on acrylonitrile–butadiene–styrene (ABS) polymer surfaces is a common need in industrial applications. The development of new eco-friendly techniques to promote ABS–copper adhesion is crucial due to the harsh
Externí odkaz:
https://doaj.org/article/5016764071dd48b39e50b6695ace3e24
Autor:
Yinchang Ma, Yuan Yan, Linqu Luo, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor th
Externí odkaz:
https://doaj.org/article/b13f4d1bcf104a229532b64af0f695b4
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Memristor-based circuits offer low hardware costs and in-memory computing, but full-memristive circuit integration for different algorithm remains limited. Cellular automata (CA) has been noticed for its well-known parallel, bio-inspired, co
Externí odkaz:
https://doaj.org/article/c610fb2cf96d44fcb91cf166791520c1
Autor:
Juan B. Roldan, David Maldonado, Cristina Aguilera-Pedregosa, Enrique Moreno, Fernando Aguirre, Rocío Romero-Zaliz, Angel M. García-Vico, Yaqing Shen, Mario Lanza
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract The development of artificial neural networks using memristors is gaining a lot of interest among technological companies because it can reduce the computing time and energy consumption. There is still no memristor, made of any material, cap
Externí odkaz:
https://doaj.org/article/8373921630bf4d9d9010340d1713d618