Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mario J. Meissl"'
Autor:
Roy Nilabh K, Hiroyuki Sekiguchi, Takashi Shibayama, Mitsuru Hiura, Anshuman Cherala, Jin Choi, Lou Mingji, Mario J. Meissl, Klein Jeffrey D, Takahiro Yoshida, Xiaoming Lu
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
The integration of a NIL into production for advanced memory devices will require compatibility with existing high-end optical lithography processes in order to meet the aggressive overlay performance specifications. To deliver such a demanding overl
Autor:
Mitsuru Hiura, Anshuman Cherala, Tatsuya Hayashi, Wei Zhang, Mario J. Meissl, Takamitsu Komaki, Yukio Takabayashi, Takehiko Iwanaga, Hiroshi Morohoshi, Osamu Morimoto, Se-Hyuk Im, Keita Sakai, Jin Choi
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Any new lithographic technology to be introduced into manufacturing must deliver either a performance advantage or a cost advantage. Key technical attributes include alignment, overlay and throughput. In this work, we review progress on pattern capab
Autor:
Se-Hyuk Im, Logan Simpson, Satoshi Iino, Anshuman Cherala, Jin Choi, Mario J. Meissl, Ecron Thompson, Mitsura Hiura
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into th
Autor:
Se-Hyuk Im, Yukio Takabayashi, Mario J. Meissl, Wei Zhang, Jin Choi, Takehiko Iwanaga, Anshuman Cherala, Osamu Morimoto, Keita Sakai
Publikováno v:
Photomask Technology 2019.
Imprint lithography is an effective and well-known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a
Autor:
Ecron Thompson, Ahmed Hussein, Mitsuru Hiura, Satoshi Iino, Anshuman Cherala, Mario J. Meissl, Jin Choi, Se-Hyuk Im, Ryan Minter, Logan Simpson
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into th
Autor:
Philip D. Schumaker, Mario J. Meissl, Babak Mokaberi, Sidlgata V. Sreenivasan, Niyaz Khusnatdinov, Anshuman Cherala, Kosta Selinidis, Dwayne L. LaBrake, Byung Jin Choi
Publikováno v:
IEEE/ASME Transactions on Mechatronics. 20:122-132
Jet and flash imprint lithography steppers have demonstrated unprecedented capability for patterning of sub-25-nm features for semiconductor manufacturing. A critical requirement for such patterning is the ability to overlay one layer of a device to
Autor:
Paul Ruchhoeft, Mario J. Meissl, Sidlgata V. Sreenivasan, F.E. Prins, John G. Ekerdt, C. Grant Willson, Byung Jin Choi, Matthew E. Colburn, Sanjay K. Banerjee, Todd Bailey
Publikováno v:
SPIE Proceedings.
The Step and Flash Imprint Lithography (SFIL) process is a low-cost, high-throughput patterning technique with a sub- 100 nm resolution capability. Investigation by this group and others indicates that the resolution of replication by imprint lithogr
Publikováno v:
Physics of Fluids. 25:092002
Thin film lubrication theory has been widely used to model multi-scale fluid phenomena. Variations of the same have also found application in fluid-based manufacturing process steps for micro- and nano-scale devices over large areas where a natural d
Autor:
Todd Bailey, Mario J. Meissl, Sidlgata V. Sreenivasan, Byung Jin Choi, John G. Ekerdt, Matthew E. Colburn, C. Grant Willson, Itai Suez
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:2685
Step and flash imprint lithography (SFIL) is an alternative approach to high-resolution patterning based on a bilayer imprint scheme. SFIL utilizes the in situ photopolymerization of an oxygen etch resistant monomer solution in the topography of a te