Zobrazeno 1 - 10 of 40 pro vyhledávání: '"Mario Ghezzo"'
1
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
Autor: T.P. Chow, Mario Ghezzo, Nicole Krishnamurthy, Robert Louis Steigerwald, Mustansir H. Kheraluwala, James W. Kretchmer, Ahmed Elasser
Publikováno v: IEEE Transactions on Industry Applications. 39:915-921
Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density. This paper presents recent results including a comparison with state-of-the-art silicon diodes. Switching losses for two sili
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4208fe7e35664b61d5f485657c131553
https://doi.org/10.1109/tia.2003.813730
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2
Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC
Autor: A.W. Clock, Kenneth A. Jones, Mario Ghezzo, A. Elasser, Nicolas A. Papanicolaou, Mulpuri V. Rao, O. W. Holland, J.A. Mittereder, Jesse B. Tucker
Publikováno v: IEEE Transactions on Electron Devices. 48:2665-2670
Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n/sup +/-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor specie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c39698c4d9abe9b3d4088a8d668b6eb3
https://doi.org/10.1109/16.974687
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6
Switching characteristics of silicon carbide power PiN diodes
Autor: James W. Kretchmer, D.M. Brown, A.W. Clock, A. Elasser, Mario Ghezzo, Nicole Krishnamurthy, T.P. Chow
Publikováno v: Solid-State Electronics. 44:317-323
Recent progress in Silicon Carbide (SiC) material has made it feasible to build power devices with reasonable current density. This paper will present recent results including a comparison with state of the art silicon diodes. The effect of diode rev
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f2c7953ac6a136dd16a8662f2cb0d55
https://doi.org/10.1016/s0038-1101(99)00238-5
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7
Characterization of phosphorus implantation in 4H-SiC
Autor: R. Patel, Vishnu K. Khemka, N. Ramungul, James W. Kretchmer, T.P. Chow, Mario Ghezzo
Publikováno v: Journal of Electronic Materials. 28:167-174
We report the characterization of phosphorus implantation in 4H-SiC. The implanted layers are characterized by analytical techniques (secondary ion mass spectrometry, transmission electron microscopy) as well as electrical and a sheet resistance valu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ce530089cde995aba1a0a7a3594e912
https://doi.org/10.1007/s11664-999-0008-z
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8
Material and n-p junction properties of N-, P-, and N/P-implanted SiC
Autor: A. Edwards, O. W. Holland, James W. Kretchmer, Nicolas A. Papanicolaou, M. A. Capano, Mulpuri V. Rao, Jason A. Gardner, G. Kelner, Mario Ghezzo
Publikováno v: Journal of Applied Physics. 83:5118-5124
Elevated temperature (ET) multiple energy N, P, and N/P implantations were performed into p-type 6H-SiC epitaxial layers. For comparison, room temperature (RT) N and P implantations were also performed. In the N/P coimplanted material a sheet resista
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7114d21430e6b322dbb39a4875ce3cf5
https://doi.org/10.1063/1.367329
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10
Ion Implantation Doping in SiC and its Device Applications
Autor: Arthur H. Edwards, Mulpuri V. Rao, O. W. Holland, Jason A. Gardner, Mario Ghezzo, Nicolas A. Papanicolaou, G. Kelner, James W. Kretchmer
Publikováno v: Materials Science Forum. :717-720
The latest ion-implantation results on SiC are presented. The authors have performed nitrogen and phosphorus (N/P) co-implantations to obtain very high n-type carrier concentrations, Si and C bombardments for compensating n-type SiC, and V-implantati
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9435766c97f6d417b3101d0ef79218a7
https://doi.org/10.4028/www.scientific.net/msf.264-268.717
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