Zobrazeno 1 - 10
of 250
pro vyhledávání: '"Mario Capizzi"'
Autor:
Hark Hoe Tan, A. Belabbes, Chennupati Jagadish, Jennifer Wong-Leung, Francesco Mura, A. Miriametro, Qiang Gao, Antonio Polimeni, A. S. Ameruddin, Michele B. Rota, Mario Capizzi, Friedhelm Bechstedt
Publikováno v:
The Journal of Physical Chemistry C. 121:16650-16656
One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e01def62f28d584ff730cdab05d84fc1
https://doi.org/10.1021/acs.jpcc.7b05482
https://doi.org/10.1021/acs.jpcc.7b05482
Autor:
Marco Felici, Mario Capizzi, Anna Vinattieri, Annamaria Gerardino, Antonio Polimeni, Mark Hopkinson, Luca Businaro, Massimo Gurioli, Francesco Biccari, Francesca Intonti, Silvia Rubini, Giorgio Pettinari
Publikováno v:
Microelectronic engineering 174 (2017): 16–19. doi:10.1016/j.mee.2016.12.003
info:cnr-pdr/source/autori:Pettinari G.; Gerardino A.; Businaro L.; Polimeni A.; Capizzi M.; Hopkinson M.; Rubini S.; Biccari F.; Intonti F.; Vinattieri A.; Gurioli M.; Felici M./titolo:A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides/doi:10.1016%2Fj.mee.2016.12.003/rivista:Microelectronic engineering/anno:2017/pagina_da:16/pagina_a:19/intervallo_pagine:16–19/volume:174
info:cnr-pdr/source/autori:Pettinari G.; Gerardino A.; Businaro L.; Polimeni A.; Capizzi M.; Hopkinson M.; Rubini S.; Biccari F.; Intonti F.; Vinattieri A.; Gurioli M.; Felici M./titolo:A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides/doi:10.1016%2Fj.mee.2016.12.003/rivista:Microelectronic engineering/anno:2017/pagina_da:16/pagina_a:19/intervallo_pagine:16–19/volume:174
We report on a novel lithographic approach for the fabrication of integrated quantum dot (QD)-photonic crystal (PhC) nanocavity systems. We exploit unique hydrogen's ability to tailor the band gap energy of dilute nitride semiconductors to fabricate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0fc9cb2384995a17979ed16a1aae1f6
https://doi.org/10.1016/j.mee.2016.12.003
https://doi.org/10.1016/j.mee.2016.12.003
Autor:
Giorgio Pettinari, Maddalena Patrini, Mario Capizzi, Antonio Polimeni, Giorgio Guizzetti, Marco Felici, M. S. Sharma, Silvia Rubini, E. Giulotto, M. Geddo
Publikováno v:
Journal of applied physics 125 (2019). doi:10.1063/1.5093809
info:cnr-pdr/source/autori:Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Sharma, M. S.; Capizzi, M.; Polimeni, A.; Pettinari, G.; Rubini, S.; Felici, M./titolo:Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-x<%2Finf>Nx<%2Finf> layers/doi:10.1063%2F1.5093809/rivista:Journal of applied physics/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:125
info:cnr-pdr/source/autori:Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Sharma, M. S.; Capizzi, M.; Polimeni, A.; Pettinari, G.; Rubini, S.; Felici, M./titolo:Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-x<%2Finf>Nx<%2Finf> layers/doi:10.1063%2F1.5093809/rivista:Journal of applied physics/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:125
The GaAs-like longitudinal-optical (LO) phonon frequency in hydrogenated GaAsN (x = 0.01) layers - with different H doses and similar low-energy irradiation conditions - was investigated by micro-Raman measurements in different scattering geometries
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aef9013df5f203904df96dcf70ab708
http://www.cnr.it/prodotto/i/408528
http://www.cnr.it/prodotto/i/408528
Autor:
Mario Capizzi, Michele B. Rota, Chennupati Jagadish, A. S. Ameruddin, Antonio Polimeni, A. Miriametro, Francesco Mura, Qiang Gao, Hark Hoe Tan, H. Aruni Fonseka
Publikováno v:
Nano Letters. 16:5197-5203
InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fe2e9207768afb1440665871238b1f3
https://doi.org/10.1021/acs.nanolett.6b02205
https://doi.org/10.1021/acs.nanolett.6b02205
Autor:
Silvia Rubini, Faustino Martelli, H. A. Fonseka, Mario Capizzi, Francesco Mura, Qian Gao, M. De Luca, Davide Tedeschi, Chennupati Jagadish, Hark Hoe Tan, Antonio Polimeni
Publikováno v:
Nano letters
16 (2016): 3085–3093. doi:10.1021/acs.nanolett.6b00251
info:cnr-pdr/source/autori:Tedeschi, D.; De Luca, M.; Fonseka, H. A.; Gao, Q.; Mura, F.; Tan, H. H.; Rubini, S.; Martelli, F.; Jagadish, C.; Capizzi, M.; Polimeni, A./titolo:Long-Lived Hot Carriers in III-V Nanowires/doi:10.1021%2Facs.nanolett.6b00251/rivista:Nano letters (Print)/anno:2016/pagina_da:3085/pagina_a:3093/intervallo_pagine:3085–3093/volume:16
16 (2016): 3085–3093. doi:10.1021/acs.nanolett.6b00251
info:cnr-pdr/source/autori:Tedeschi, D.; De Luca, M.; Fonseka, H. A.; Gao, Q.; Mura, F.; Tan, H. H.; Rubini, S.; Martelli, F.; Jagadish, C.; Capizzi, M.; Polimeni, A./titolo:Long-Lived Hot Carriers in III-V Nanowires/doi:10.1021%2Facs.nanolett.6b00251/rivista:Nano letters (Print)/anno:2016/pagina_da:3085/pagina_a:3093/intervallo_pagine:3085–3093/volume:16
Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::272ecad186ba04b96af092aee850b00e
https://doi.org/10.1021/acs.nanolett.6b00251
https://doi.org/10.1021/acs.nanolett.6b00251
Autor:
A. V. Velichko, Laurent Cerutti, Davide Maria Di Paola, M. Bomers, Alexei N. Baranov, Manoj Kesaria, Nilanthy Balakrishnan, Anthony Krier, Oleg Makarovsky, Mario Capizzi, Thierry Taliercio, Amalia Patanè
Publikováno v:
Advanced Optical Materials
Advanced Optical Materials, Wiley, 2018, 6 (3), pp.1700492. ⟨10.1002/adom.201700492⟩
Advanced Optical Materials, Wiley, 2018, 6 (3), pp.1700492. ⟨10.1002/adom.201700492⟩
Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02e4044942424b2c0bc800c421799eb3
https://orca.cardiff.ac.uk/id/eprint/114061/1/Paola_et_al-2018-Advanced_Optical_Materials.pdf
https://orca.cardiff.ac.uk/id/eprint/114061/1/Paola_et_al-2018-Advanced_Optical_Materials.pdf
Autor:
Marco Felici, M. S. Sharma, Mark Hopkinson, Francesco Biccari, Anna Vinattieri, Francesca Intonti, Giorgio Pettinari, Federico La China, Annamaria Gerardino, Luca Businaro, Massimo Gurioli, Alice Boschetti, Antonio Polimeni, Mario Capizzi
Publikováno v:
Advanced Materials
Advanced materials (Weinh., Print) 30 (2018). doi:10.1002/adma.201705450
info:cnr-pdr/source/autori:Biccari, Francesco; Boschetti, Alice; Pettinari, Giorgio; La China, Federico; Gurioli, Massimo; Intonti, Francesca; Vinattieri, Anna; Sharma, Mayankshekhar; Capizzi, Mario; Gerardino, Annamaria; Businaro, Luca; Hopkinson, Mark; Polimeni, Antonio; Felici, Marco/titolo:Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination/doi:10.1002%2Fadma.201705450/rivista:Advanced materials (Weinh., Print)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:30
Advanced materials (Weinh., Print) 30 (2018). doi:10.1002/adma.201705450
info:cnr-pdr/source/autori:Biccari, Francesco; Boschetti, Alice; Pettinari, Giorgio; La China, Federico; Gurioli, Massimo; Intonti, Francesca; Vinattieri, Anna; Sharma, Mayankshekhar; Capizzi, Mario; Gerardino, Annamaria; Businaro, Luca; Hopkinson, Mark; Polimeni, Antonio; Felici, Marco/titolo:Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination/doi:10.1002%2Fadma.201705450/rivista:Advanced materials (Weinh., Print)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:30
Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d15c4e8f59082281999fc826d755af2
Publikováno v:
Semiconductor science and technology
33 (2018). doi:10.1088/1361-6641/aab3f1
info:cnr-pdr/source/autori:Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio/titolo:Spatially selective hydrogen irradiation of dilute nitride semiconductors: A brief review/doi:10.1088%2F1361-6641%2Faab3f1/rivista:Semiconductor science and technology (Print)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:33
33 (2018). doi:10.1088/1361-6641/aab3f1
info:cnr-pdr/source/autori:Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio/titolo:Spatially selective hydrogen irradiation of dilute nitride semiconductors: A brief review/doi:10.1088%2F1361-6641%2Faab3f1/rivista:Semiconductor science and technology (Print)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:33
We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N-H complexes in these compounds - coupled to the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e766c20dccb74d1b9be96ae17d4c561b
http://www.cnr.it/prodotto/i/387635
http://www.cnr.it/prodotto/i/387635
Autor:
Mario Capizzi, Amalia Patanè, Anthony Krier, Simone Birindelli, A. V. Velichko, Manoj Kesaria, Qiandong Zhuang
Publikováno v:
BASE-Bielefeld Academic Search Engine
We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4K the PL emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e80a2083fea31adbac9d4d006593026
https://doi.org/10.1016/j.infrared.2014.11.016
https://doi.org/10.1016/j.infrared.2014.11.016
Autor:
Qiang Gao, Chennupati Jagadish, Hark Hoe Tan, Antonio Polimeni, Peter C. M. Christianen, A. Granados del Águila, G. Ambrosio, Davide Tedeschi, M. De Luca, Mario Capizzi
Publikováno v:
Nano Letters, 16, 6213-6221
Nano Letters, 16, 10, pp. 6213-6221
Nano Letters, 16, 10, pp. 6213-6221
The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdc5bc4b1c80cee2fb12589ef7bb7885
http://hdl.handle.net/2066/161541
http://hdl.handle.net/2066/161541