Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Marinus Fischer"'
Autor:
Marinus Fischer, Miro Zeman, Ravi Vasudevan, D.J. van der Vlies, Valeria Demontis, Jimmy Melskens, Arno H. M. Smets, Marc Schouten, S.G.M. Heirman, Rudi Santbergen, Klaus Jäger, Robin J. V. Quax
Publikováno v:
Solar Energy Materials and Solar Cells. 129:70-81
A profound comprehension of the nanostructure of hydrogenated amorphous silicon (a-Si:H) and the defect states in this material is currently still lacking despite several decades of research on this topic. Investigating the nature of defects in a-Si:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a92069b1e3dcb44899af3bd0aced0934
https://doi.org/10.1016/j.solmat.2014.03.022
https://doi.org/10.1016/j.solmat.2014.03.022
Autor:
Miro Zeman, B. Vet, R.A.C.M.M. van Swaaij, Arno H. M. Smets, Marinus Fischer, David C. Bobela, MA Wank, R. M. C. M. van de Sanden, C.R. Wronski
Publikováno v:
IEEE Journal of Photovoltaics, 2(2), 94-98. IEEE Electron Devices Society
The bandgap of hydrogenated amorphous silicon (a-Si:H) is studied using a unique set of a-Si:H films deposited by means of three different processing techniques. Using this large collection of a-Si:H films with a wide variety of nanostructures, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb6cbaad90af00979ef660e6724c9a58
https://doi.org/10.1109/jphotov.2011.2180701
https://doi.org/10.1109/jphotov.2011.2180701
Autor:
I. Novotný, Marie Netrvalová, Martijn Tijssen, Miro Zeman, Lucie Prušáková, Marinus Fischer, Vladimír Tvarožek, Pavol Šutta, S. Flickyngerova
Publikováno v:
Vacuum. 86:765-768
In consequence of previous investigation of individual transparent conductive oxide (TCO) and absorber layers a study was carried out on hydrogenated amorphous silicon (a-Si:H) solar cells with diluted intrinsic a-Si:H absorber layers deposited on gl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c46317cdaf47ac686d67646ca35b6c
https://doi.org/10.1016/j.vacuum.2011.07.038
https://doi.org/10.1016/j.vacuum.2011.07.038
Publikováno v:
MRS Proceedings. 1426:75-80
We recently developed a scattering model based on the scalar scattering theory. In this contribution we present how we used the scattering model to investigate interface textures with optimized scattering properties. We used the simulated annealing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f70c3f20c3b1d574417930222ac24d
https://doi.org/10.1557/opl.2012.886
https://doi.org/10.1557/opl.2012.886
Autor:
Miro Zeman, Klaus Lips, Arno H. M. Smets, Amgalanbaatar Baldansuren, M.P. Plokker, Marinus Fischer, Stephan W. H. Eijt, H. Schut, Alexander Schnegg, Jimmy Melskens
Publikováno v:
Physical Review, 91, 2015
The structural and electrical properties of metastable defects in various types of hydrogenated amorphous silicon have been studied using a powerful combination of continuous wave electron-paramagnetic resonance spectroscopy, electron spin echo (ESE)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b64f859e30a3be8824d91ae1c5b28904
http://resolver.tudelft.nl/uuid:2a54c9f0-a848-4dc7-8982-9570b7a85523
http://resolver.tudelft.nl/uuid:2a54c9f0-a848-4dc7-8982-9570b7a85523
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2.
In this study it is revealed that the light induced defects (LIDs) responsible for the fast degradation of hydrogenated amorphous silicon (a-Si:H) solar cells under light soaking are located at nanosized voids. This important breakthrough in identify
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246a55a5ff90e5e81a59a5764c2e2d4b
https://doi.org/10.1109/pvsc-vol2.2013.7179246
https://doi.org/10.1109/pvsc-vol2.2013.7179246
Publikováno v:
Journal of Applied Physics, 111 (8), 2012
We present a scattering model based on the scalar scattering theory that allows estimating far field scattering properties in both transmission and reflection for nano-textured interfaces. We first discuss the theoretical formulation of the scatterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63b69acab29cdf9150b62c0a1fb3ce19
http://resolver.tudelft.nl/uuid:bceb6955-eb0c-4ef9-9364-5abda6204655
http://resolver.tudelft.nl/uuid:bceb6955-eb0c-4ef9-9364-5abda6204655
Autor:
Miro Zeman, MA Wank, B. Vet, M.C.M. van de Sanden, David C. Bobela, R.A.C.M.M. van Swaaij, C.R. Wronski, A. H. M. Smets, Marinus Fischer
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
The network and nature of hydrogenated amorphous silicon (a-Si:H) are conventionally interpreted in terms of a continuous random network (CRN) of Si-Si bonds, weak Si-Si, Si-H bond and dangling bonds. A CRN requires that the smallest anisotropic feat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb6ab6090783c4c903b4ebddae87b50
https://doi.org/10.1109/pvsc.2011.6186662
https://doi.org/10.1109/pvsc.2011.6186662
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
The properties of thin-film silicon strongly depend on the deposition method, conditions and the substrate material. The analysis of the microstructure of thin silicon films requires diagnostic tools which are independent on substrate or device conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c461a709521dab77027598f269fea1
https://doi.org/10.1109/pvsc.2011.6185875
https://doi.org/10.1109/pvsc.2011.6185875
Publikováno v:
Open Physics, Vol 9, Iss 5, Pp 1301-1308 (2011)
The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30e3bb2b7a3f8fb57f8e57f9440ff7b9
https://doi.org/10.2478/s11534-011-0041-4
https://doi.org/10.2478/s11534-011-0041-4