Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Marino J. Martinez"'
Autor:
Jenn-Hwa Huang, M. Durlam, Ernie Schirmann, Saied N. Tehrani, Marino J. Martinez, Nyles W. Cody
Publikováno v:
Thin Solid Films. :493-496
NiGeW has been successfully implemented as a contact material on GaAs MESFETs in a production environment. However, when identical contacts were used on heterostructure field effect transistors (HFETs), a strong interaction was observed between NiGeW
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
Single supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of HBT and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET de
Autor:
Marino J. Martinez, J. Huang, W. Valentine, W. Peatman, E. Glass, K. Johnson, M. LaBelle, Olin L. Hartin, J. Costa
Publikováno v:
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).
We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital and analog portable communications
Autor:
Marino J. Martinez, Ernie Schirmann, K. Barkley, Saied N. Tehrani, T. Driver, Nyles W. Cody, Jenn-Hwa Huang, M. Durlam
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
Power Pseudomorphic High Electron Mobility Transistors (P-HEMTs) with unprecedented efficiency are being produced for low-voltage portable wireless products. 12 mm devices operating at 3.5 V achieve more than 75% power added efficiency, 1.5 W output