Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Marina V. Plat"'
Publikováno v:
Journal of The Electrochemical Society. 141:1034-1040
Current photospeed testing methods are based on dose to clear (E 0 ) or resist contrast (γ 10 ). Either method is inadequate for controlling sensitivity to within ±1.5%. We investigated various methods for improving these photospeed tests. Ranked i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da30147057b837de14f55af45b317c18
https://doi.org/10.1149/1.2054837
https://doi.org/10.1149/1.2054837
Autor:
Marina V. Plat, Judy de Leo
Publikováno v:
Journal of Chromatography A. 546:347-350
Ionic contamination is a frequent cause of corrosion failures in electronics packaging. Ionic Cl − , SO 2− 4 , Na + and K + are the species most frequently associated with corrosion and are easily detected by ion chromatography (IC) or other surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe96cca05dfc50b885876aae66d5ebc
https://doi.org/10.1016/s0021-9673(01)93033-x
https://doi.org/10.1016/s0021-9673(01)93033-x
Autor:
Zhanping Zhang, Joffre Bernard, Bruno La Fontaine, Thomas Wallow, Harry J. Levinson, Brian MacDonald, Marina V. Plat, Jeremias Romero
Publikováno v:
SPIE Proceedings.
Time-of-flight secondary-ion mass spectrometry (TOF-SIMS) imaging is demonstrated as a sensitive qualitative method for characterizing surface acid concentratio ns and accompanying chemical changes at resist surfaces. We show its utility in analyzing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808c7aeff198eff1c267a5891d6ed260
https://doi.org/10.1117/12.712338
https://doi.org/10.1117/12.712338
Autor:
Itty Matthew, Amada Wilkison, Todd P. Lukanc, Cyrus E. Tabery, Makoto Takahashi, Marina V. Plat
Publikováno v:
Optical Microlithography XVIII.
Patterning of dense gratings with sub-wavelength pitches presents a challenge that can be addressed using Resolution Enhancement Techniques (RETs) such as dipole illumination, with the dipole axis perpendicular to the dense line orientation. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ae8a8917204d0ff7910400dfef291d
https://doi.org/10.1117/12.606444
https://doi.org/10.1117/12.606444
Publikováno v:
SPIE Proceedings.
Early insertion of ArF nm lithography will occur at the 130 nm node in 2001. Process development for the 100 nm node will also occur this year. Both aggressive gate length reductions and minimum pitch design rules below 250 nm present immediate chall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c21ce06ce817b58c771e841ff818ef1e
https://doi.org/10.1117/12.435785
https://doi.org/10.1117/12.435785
Publikováno v:
SPIE Proceedings.
Early insertion of ArF nm lithography will occur at the 130 nm node in 2001. Process development for the 100nm node will also occur this year. Both aggressive gate length reductions and minimum pitch design rules below 250nm present immediate challen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda57b5effe87cfd11c06c2e7b304fb6
https://doi.org/10.1117/12.425202
https://doi.org/10.1117/12.425202
Autor:
Uzodinma Okoroanyanwu, Marina V. Plat, Harry J. Levinson, Khanh B. Nguyen, Christopher Lee Pike, Scott A. Bell, Christopher F. Lyons, Khoi A. Phan, Paul L. King
Publikováno v:
SPIE Proceedings.
As lithographic technology nodes advance beyond the 193 nm generation, the optical absorption of organic materials will require the use of thin layer imaging (TLI) techniques. Of the techniques under consideration, the use of ultra-thin resist (UTR)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1148e2aa0504d03b08cb40cdb858c021
https://doi.org/10.1117/12.390068
https://doi.org/10.1117/12.390068
Autor:
Chris A. Spence, Marina V. Plat, Emile Y. Sahouria, Nicolas B. Cobb, Franklin M. Schellenberg
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3581058e1eef0f4a8f6310db1e09f512
https://doi.org/10.1117/12.392102
https://doi.org/10.1117/12.392102
Publikováno v:
SPIE Proceedings.
Resolution, R, in optical lithography is often described by the Rayleigh equation: R equals k1(lambda) /NA. Since the 0.25 um generation there has been a trend of aggressive gate length reduction for high performance devices. Leading edge logic techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475eb945f8e575bac2d028cf00fc5a32
https://doi.org/10.1117/12.389009
https://doi.org/10.1117/12.389009
Autor:
Franklin M. Schellenberg, Marina V. Plat, Emile Sahouria, Christopher A. Spence, Nicolas B. Cobb
Publikováno v:
SPIE Proceedings.
In this paper we discuss some of the problems and solutions discovered when implementing 2-mask strong phase shifter designs for the poly gate level in logic designs. Experimental results are presented showing pattern fidelity for different reticle d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a61c378023e582dc45efdd8d4ea486d
https://doi.org/10.1117/12.373322
https://doi.org/10.1117/12.373322