Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Marina M Kulagina"'
Autor:
Mikhail V. Maximov, Nikita Yu. Gordeev, Yuri M. Shernyakov, Grigoriy O. Kornyshov, Artem A. Beckman, Alexey S. Payusov, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Marina M. Kulagina, Alexey E. Zhukov
Publikováno v:
Photonics, Vol 10, Iss 10, p 1090 (2023)
We study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chi
Externí odkaz:
https://doaj.org/article/52dec16217a74f92866751ab6b579778
Autor:
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov, Alexandr A. Vorobyev, Alexey M. Mozharov, Nikolay A. Kalyuzhnyy, Sergey A. Mintairov, Marina M. Kulagina, Natalia V. Kryzhanovskaya, Alexey E. Zhukov
Publikováno v:
IEEE Photonics Technology Letters. 34:1349-1352
Autor:
Alexey E. Zhukov, Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Anna S. Dragunova, Mingchu Tang, Siming Chen, Huiyun Liu, Marina M. Kulagina, Svetlana A. Kadinskaya, Fedor I. Zubov, Alexey M. Mozharov, Mikhail V. Maximov
Publikováno v:
Materials, Vol 13, Iss 10, p 2315 (2020)
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etchi
Externí odkaz:
https://doaj.org/article/83562d5c96fc4ed59349549cb2c26770
Autor:
Fedor I Zubov, Eduard I Moiseev, Mikhail V Maximov, Alexandr A Vorobyev, Alexey M Mozharov, Yuri M Shernyakov, Nikolay A Kalyuzhnyy, Sergey A Mintairov, Marina M Kulagina, Vladimir G Dubrovskii, Natalia V Kryzhanovskaya, Alexey E Zhukov
Publikováno v:
Laser Physics. 32:125802
Half-disk lasers fabricated by cleaving initial full-disk lasers have an advantage of directional light outcoupling as well as increased output power and efficiency as compared to full-disk lasers of the same diameter. The continuous wave output powe
Autor:
Nikita Yu Gordeev, Marina M Kulagina, Yuliya A Guseva, Artem A Serin, Alexey S Payusov, Grigorij O Kornyshov, Fedor I Zubov, Alexey E Zhukov, Mikhail V Maximov
Publikováno v:
Laser Physics Letters. 19:066201
An original design of ring semiconductor lasers based on InAs/InGaAs/GaAs quantum dots, promising for clock pulse generation, optical sensing, biological and medical applications, and microwave photonics, has been proposed and tested. Lasing was obta
Autor:
Marina M. Kulagina, Victor M. Ustinov, E.V. Nikitina, A. G. Kuzmenkov, Nikolai N. Ledentsov, Nikolai A. Maleev, Andrey G. Gladyshev, James A. Lott, Yuriy M. Zadiranov, Alexey M. Nadtochiy
Publikováno v:
22nd IEEE International Semiconductor Laser Conference.
We report planar vertical cavity surface emitting lasers with record 15 mW of continuous wave single transverse mode output power that employ spatially displaced multiple aperture and deep oxidation layers in a bottom emitting geometry.
Autor:
Zubov F, Beckman A, Shernyakov Y, Kaluzhnyy N, Mintairov S, Guseva Y, Kulagina M, Dubrovskii VG, Maximov M
Publikováno v:
Optics letters [Opt Lett] 2024 May 01; Vol. 49 (9), pp. 2361-2364.
Autor:
Zhukov A, Nadtochiy A, Karaborchev A, Fominykh N, Makhov I, Ivanov K, Guseva Y, Kulagina M, Blokhin S, Kryzhanovskaya N
Publikováno v:
Optics letters [Opt Lett] 2024 Jan 15; Vol. 49 (2), pp. 330-333.
Autor:
Evropeitsev E; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Nechaev D; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Jmerik V; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Zadiranov Y; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Kulagina M; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Troshkov S; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Guseva Y; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Berezina D; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Shubina T; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia., Toropov A; Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Jul 12; Vol. 13 (14). Date of Electronic Publication: 2023 Jul 12.
Autor:
Galimov A; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Bobrov M; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Rakhlin M; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Serov Y; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Kazanov D; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Veretennikov A; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Klimko G; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Sorokin S; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Sedova I; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Maleev N; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Zadiranov Y; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Kulagina M; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Guseva Y; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Berezina D; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia., Nikitina E; Laboratory of Nanoelectronics, St. Petersburg Academic University, 194021 St. Petersburg, Russia., Toropov A; Ioffe Institute, Politekhnicheskaya St. 26, 194021 St. Petersburg, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 May 08; Vol. 13 (9). Date of Electronic Publication: 2023 May 08.