Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Marina, Nikiforova"'
Autor:
Osorio Lopes Abath Neto, Zachary A. Koretz, Abigail I. Wald, Pamela P. Rath, Marina Nikiforova, Charleen T. Chu
Publikováno v:
American Journal of Ophthalmology Case Reports, Vol 27, Iss , Pp 101599- (2022)
Purpose: To describe a case of iris metastasis as the initial presentation of clear cell renal cell carcinoma, and to discuss molecular profiling of both the metastasis and primary kidney tumor. Observations: We report a patient with blurred vision w
Externí odkaz:
https://doaj.org/article/5ad655f0ce394d05a15f09c259f0566e
Autor:
Marina Nikiforova
Publikováno v:
Политическая лингвистика. :59-68
Autor:
Abigail Wald, James Pingpank, Melanie Ongchin, Lauren Hall, Heather Jones, Shannon Altpeter, Michele Liebdzinski, Ahmed Hamed, Joshua Derby, Marina Nikiforova, Phoenix Bell, Alessandro Paniccia, Amer Zureikat, Vikram Gorantla, John Rhee, Roby Thomas, David Bartlett, Katelyn Smith, Patrick Henn, Brian Theisen, Susan Shyu, Akram Shalaby, Haroon Choudry, Aatur Singhi
Appendiceal mucinous neoplasms (AMNs) with disseminated disease are a heterogeneous group of tumors with variable clinicopathologic behavior. Despite the development of prognostic systems, objective biomarkers are needed to accurately stratify patien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43031ed9e133682586dcf09c44c9251b
https://doi.org/10.21203/rs.3.rs-1821239/v1
https://doi.org/10.21203/rs.3.rs-1821239/v1
Publikováno v:
Sensors, Vol 19, Iss 8, p 1855 (2019)
We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated o
Externí odkaz:
https://doaj.org/article/369743e63b1d46d8a3934c3ba9047c00
Publikováno v:
Proceedings, Vol 2, Iss 13, p 777 (2018)
There are presented the generalized results of studies of performance degradation of hydrogen sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si. It was shown how responses’ parameters change during long-term tests of sensors under repeated hy
Externí odkaz:
https://doaj.org/article/37301ca8e9484a359b6161f57750337a
Publikováno v:
Proceedings, Vol 1, Iss 4, p 446 (2017)
The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hyd
Externí odkaz:
https://doaj.org/article/6d0c48c171ee451ba784ea29afff3bf8
Autor:
Elena Don, Olga Farafonova, Suzanna Pokhil, Darya Barykina, Marina Nikiforova, Darya Shulga, Alena Borshcheva, Sergey Tarasov, Tatyana Ermolaeva, Oleg Epstein
Publikováno v:
Sensors, Vol 16, Iss 1, p 96 (2016)
In preliminary ELISA studies where released-active forms (RAF) of antibodies (Abs) to interferon-gamma (IFNg) were added to the antigen-antibody system, a statistically significant difference in absorbance signals obtained in their presence in compar
Externí odkaz:
https://doaj.org/article/b5eeb0cf63f54584b72beeb6252fca57
Autor:
Marina Nikiforova
Publikováno v:
E3S Web of Conferences, Vol 208, p 09021 (2020)
The paper discusses the basic trends in the system of Russian higher education in the light of transition to the model of education for sustainable development. Special attention is given to some tendencies in language teaching in institutions of hig
Publikováno v:
Proceedings, Vol 1, Iss 4, p 446 (2017)
The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hyd
Publikováno v:
Sensors
Volume 19
Issue 8
Sensors, Vol 19, Iss 8, p 1855 (2019)
Volume 19
Issue 8
Sensors, Vol 19, Iss 8, p 1855 (2019)
We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated o