Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Marilyne, Sousa"'
Autor:
Lorenzo Rocchino, Alan Molinari, Igor Kladaric, Federico Balduini, Heinz Schmid, Marilyne Sousa, John Bruley, Holt Bui, Bernd Gotsmann, Cezar B. Zota
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materia
Externí odkaz:
https://doaj.org/article/5fabe3bd586a45d7af55d0138d60b9bd
Autor:
Federico Balduini, Alan Molinari, Lorenzo Rocchino, Vicky Hasse, Claudia Felser, Marilyne Sousa, Cezar Zota, Heinz Schmid, Adolfo G. Grushin, Bernd Gotsmann
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract The chiral anomaly - a hallmark of chiral spin-1/2 Weyl fermions - is an imbalance between left- and right-moving particles that underpins phenomena such as particle decay and negative longitudinal magnetoresistance in Weyl semimetals. The d
Externí odkaz:
https://doaj.org/article/05dbb72856724526988bd8b86324bcec
Autor:
Olivier Maher, Roy Bernini, Nele Harnack, Bernd Gotsmann, Marilyne Sousa, Valeria Bragaglia, Siegfried Karg
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract With remarkable electrical and optical switching properties induced at low power and near room temperature (68 °C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research com
Externí odkaz:
https://doaj.org/article/2446e7a23d2e4a4dbbf06c4572eb28ae
Publikováno v:
Open Research Europe, Vol 4 (2024)
Background This article introduces an innovative classification methodology to identify nanowires within scanning electron microscope images. Methods Our approach employs advanced image manipulation techniques in conjunction with machine learning-bas
Externí odkaz:
https://doaj.org/article/c8877993b15945c595f8fc1c0dd27aad
Autor:
Mattia Halter, Laura Bégon-Lours, Marilyne Sousa, Youri Popoff, Ute Drechsler, Valeria Bragaglia, Bert Jan Offrein
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-8 (2023)
Brain-inspired neuromorphic computing is a key technology for processing an ever-growing amount of data. Here, an artificial synapse with dual resistance modulation mechanisms is demonstrated, achieving a dynamic range of 60, an endurance exceeding 1
Externí odkaz:
https://doaj.org/article/8f4acd7863994ad7a59123d6dd57de55
Publikováno v:
Nanoscale Research Letters, Vol 18, Iss 1, Pp 1-11 (2023)
Abstract The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is si
Externí odkaz:
https://doaj.org/article/c9c93489e1eb4560add84ce70eabcce1
Autor:
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon wa
Externí odkaz:
https://doaj.org/article/f45527129cc44c06a14be2f78a4439a3
Autor:
Katarzyna E. Hnida-Gut, Marilyne Sousa, Marinus Hopstaken, Steffen Reidt, Kirsten Moselund, Heinz Schmid
Publikováno v:
Frontiers in Chemistry, Vol 9 (2022)
High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternat
Externí odkaz:
https://doaj.org/article/a6ac808bb60646d083e658d2bb759b40
Autor:
Svenja Mauthe, Yannick Baumgartner, Marilyne Sousa, Qian Ding, Marta D. Rossell, Andreas Schenk, Lukas Czornomaz, Kirsten E. Moselund
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data recep
Externí odkaz:
https://doaj.org/article/d4095ee184a34bea8d5aada219f19f44
Autor:
Alan Molinari, Federico Balduini, Lorenzo Rocchino, Rafał Wawrzyńczak, Marilyne Sousa, Holt Bui, Christian Lavoie, Vesna Stanic, Jean Jordan-Sweet, Marinus Hopstaken, Serguei Tchoumakov, Selma Franca, Johannes Gooth, Simone Fratini, Adolfo G. Grushin, Cezar Zota, Bernd Gotsmann, Heinz Schmid
Publikováno v:
ACS Applied Electronic Materials. 5:2624-2637