Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Marilyn Kamna"'
Publikováno v:
SPIE Proceedings.
For Extreme Ultra-violet Lithography (EUVL) targeting at 11nm and beyond design rules, the minimum printable EUVL multilayer (ML) mask defect size can be as small as 20-25nm. As a result, the defect-free EUVL ML mask blank fabrication remains the top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670c3329fbb4a32b5558332d1eb0a320
https://doi.org/10.1117/12.927018
https://doi.org/10.1117/12.927018
Autor:
Sanjay Goyal, Michael L. Leeson, Manish Chandhok, Jan Hermans, Steven L. Carson, Marilyn Kamna, Seh-Jin Park, Guojing Zhang, Tod A. Laursen, Alan Myers, Alan R. Stivers, Sanjay Govindjee, Gian Lorusso, Gerd Brandstetter, Eric Hendrickx, Fabian C. Martinez
Publikováno v:
Alternative Lithographic Technologies.
EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047f392a3a1419ed816bce5f4cda69ec
https://doi.org/10.1117/12.814428
https://doi.org/10.1117/12.814428
Autor:
Nathan Wilcox, Chuan Hu, Seh-Jin Park, Guojing Zhang, Marilyn Kamna, Kamgmin Hsia, Fabian C. Martinez, Chandhok Manish, Alan R. Stivers
Publikováno v:
Photomask Technology 2008.
Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938b1c8ff3369af7d62b872118fb9423
https://doi.org/10.1117/12.801542
https://doi.org/10.1117/12.801542
Autor:
Ken Mr. Buckmann, Long He, Marilyn Kamna, Steven Labovitz, Michael Kovalchick, Qi-De Qian, Jeff Farnsworth, Wen-Hao Cheng, Yulia Korobko, Wilman Tsai, Brian Irvine, R. Talevi
Publikováno v:
SPIE Proceedings.
Alternating Phase Shift Mask (APSM) reticles is critical to achieve sub 0.1 um poly gate lithography. Intrinsic APSM image inbalance can be resolved with various methods such as isotropic etch and aperture sizing, where positional line-shift can be r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb3baf457f813d4a6e4f05ed737b5ef1
https://doi.org/10.1117/12.410720
https://doi.org/10.1117/12.410720
Autor:
Thomas P. Coleman, Frederick T. Chen, Wilman Tsai, Jeff Farnsworth, Marilyn Kamna, Scott Chegwidden, S. Yu
Publikováno v:
SPIE Proceedings.
As requirement of CD uniformity on photomask continue to tighten with advanced logic and memory devices, new process technologies will be needed to be developed to address the gap of process capability. For instance, a less than 20 nm CD range will b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3415bbee005bf66b9b67c73bdbee4e43
https://doi.org/10.1117/12.332864
https://doi.org/10.1117/12.332864
Autor:
Jeff Farnsworth, Scott Chegwidden, Giang T. Dao, Frederick T. Chen, Wilman Tsai, Marilyn Kamna, Steven Labovitz
Publikováno v:
SPIE Proceedings.
Fabrication of 0.18 micrometers generation clearfield logic device photomask with plasma etch was compared with wet etch method in current 0.25 micrometers mask technology. Spatial consistency between the resist develop and plasma etch modules was cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f86dea2061074e3a42bda1da3f05c77
https://doi.org/10.1117/12.328796
https://doi.org/10.1117/12.328796