Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Mariia Gorchichko"'
Autor:
Mariia Gorchichko, En Xia Zhang, Mahmud Reaz, Kan Li, Peng Fei Wang, Jingchen Cao, Rachel M. Brewer, Ronald D. Schrimpf, Robert A. Reed, Brian D. Sierawski, Michael L. Alles, Jonathan Cox, Steven L. Moran, Subramanian S. Iyer, Daniel M. Fleetwood
Publikováno v:
IEEE Transactions on Electron Devices. 70:3215-3222
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e68fbaf6e6cf221bcf848f3fae253f7b
https://doi.org/10.1109/ted.2023.3265939
https://doi.org/10.1109/ted.2023.3265939
Autor:
Kan Li, Xuyi Luo, M. W. Rony, Mariia Gorchichko, Gaspard Hiblot, Stefaan Van Huylenbroeck, Anne Jourdain, Michael L. Alles, Robert A. Reed, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:442-448
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c130cda71937f4fab3a6719b4b9c6aa
https://doi.org/10.1109/tns.2023.3239844
https://doi.org/10.1109/tns.2023.3239844
Autor:
Delgermaa Nergui, Jeffrey W. Teng, Mozghan Hosseinzadeh, Yaw Mensah, Kan Li, Mariia Gorchichko, Adrian Ildefonso, Brett L. Ringel, En Xia Zhang, Daniel M. Fleetwood, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1079-1084
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876665d02d130fe700529b8954bc464d
https://doi.org/10.1109/tns.2022.3164327
https://doi.org/10.1109/tns.2022.3164327
Autor:
Kan Li, Hanbin Ying, En Xia Zhang, Daniel M. Fleetwood, R. Nathan Nowlin, Yaw Mensah, Hari Parameswaran, Delgermaa Nergui, Adrian Ildefonso, Nelson E. Sepulveda-Ramos, Nathaniel A. Dodds, Jeffrey W. Teng, George N. Tzintzarov, Brett Ringel, Mariia Gorchichko, Clifford D. Cheon, John D. Cressler, Sunil G. Rao
Publikováno v:
IEEE Transactions on Nuclear Science. 69:282-289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e2f7950117ea42eefbbf0cbb41ff97
https://doi.org/10.1109/tns.2021.3119536
https://doi.org/10.1109/tns.2021.3119536
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2724-2735
Effects of ~35 years of aging during storage are investigated on the radiation response and 1/f noise of Oki nMOS and pMOS transistors with high oxygen vacancy densities in SiO2. Short-term interface-trap buildup during irradiation is enhanced signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad0d66c4f44ecafb1565b6011b471078
https://doi.org/10.1109/tns.2021.3128835
https://doi.org/10.1109/tns.2021.3128835
Autor:
Robert A. Reed, Simeng E. Zhao, Kan Li, En Xia Zhang, Mariia Gorchichko, Michael L. Alles, Daniel M. Fleetwood, Gaspard Hiblot, Anne Jourdain, Peng Fei Wang, Stefaan Van Huylenbroeck, Mahmud Reaz, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 68:740-747
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in advanced bulk nMOS and pMOS FinFETs with SiO2/HfO2 gate dielectrics. Otherwise identical devices built with and without through-silicon via (TSV) integration exhibit threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44d61c96284d0970a82b074c7ad2e81c
https://doi.org/10.1109/tns.2021.3065563
https://doi.org/10.1109/tns.2021.3065563
Autor:
Mariia Gorchichko, Michael L. Alles, En Xia Zhang, Daniel M. Fleetwood, Brian D. Sierawski, Ronald D. Schrimpf, Peng Fei Wang, Subramanian S. Iyer, Steven Moran, Dennis R. Ball, Rachel M. Brewer, Jonathan Cox
Publikováno v:
IEEE Transactions on Nuclear Science. 68:677-686
Total-ionizing-dose (TID) effects are investigated for 22-nm fully-depleted silicon-on-insulator (FDSOI) and 14-nm bulk FinFET charge-trap memory transistors. Electron trapping in the gate dielectric establishes the programmed memory state for both s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95abde82c49f30beb38a3feb085886ad
https://doi.org/10.1109/tns.2021.3059594
https://doi.org/10.1109/tns.2021.3059594
Autor:
Jerome Mitard, Robert A. Reed, Ronald D. Schrimpf, Robert A. Weller, M. Brandon Smith, Michael L. Alles, Mariia Gorchichko, Andrew M. Tonigan, Jingtian Fang, Dimitri Linten, Mahmud Reaz, Massimo V. Fischetti, Andrew O'Hara, Kan Li, Sokrates T. Pantelides, Stephanie L. Weeden-Wright, Daniel M. Fleetwood, En Xia Zhang, M. W. Rony
Publikováno v:
IEEE Transactions on Electron Devices. 68:2556-2563
The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d367e1dd4772f29062d02014f8b620c
https://doi.org/10.1109/ted.2021.3068328
https://doi.org/10.1109/ted.2021.3068328
Autor:
Shintaro Toguchi, Michael L. Alles, Laurent Brunet, Perrine Batude, Ronald D. Schrimpf, Severine Cheramy, Mariia Gorchichko, Stephane Moreau, Robert A. Reed, Daniel M. Fleetwood, Francois Andrieu, En Xia Zhang
Publikováno v:
IEEE Electron Device Letters. 41:637-640
Effects of additional thermal budget associated with a three-dimensional (3D) fabrication sequence are evaluated for the total-ionizing dose radiation response of fully depleted silicon-on-insulator (FD-SOI) MOSFETs. Current-voltage and low-frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fb85e612a6e72168dbc66537d9b4010
https://doi.org/10.1109/led.2020.2972439
https://doi.org/10.1109/led.2020.2972439
Autor:
En Xia Zhang, Chundong Liang, Mariia Gorchichko, Simeng E. Zhao, Daniel M. Fleetwood, Huiqi Gong, Dimitri Linten, Pan Wang, Yan-Rong Cao, Dawei Yan, Robert A. Reed, Rong Jiang, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 67:245-252
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10–40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56cfb8876994774af89362dc4a8c630
https://doi.org/10.1109/tns.2019.2960815
https://doi.org/10.1109/tns.2019.2960815