Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mariia, Anikeeva"'
Autor:
Arianna Ferrari, Josh Peters, Mariia Anikeeva, Andrey Pravdivtsev, Frowin Ellermann, Kolja Them, Olga Will, Eva Peschke, Hikari Yoshihara, Olav Jansen, Jan-Bernd Hövener
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-16 (2022)
Abstract The setup, operational procedures and performance of a cryogen-free device for producing hyperpolarized contrast agents using dissolution dynamic nuclear polarization (dDNP) in a preclinical imaging center is described. The polarization was
Externí odkaz:
https://doaj.org/article/083eb3cc20044a82b4fe791b88027e7d
Autor:
Tuula Peñate Medina, Jan Philip Kolb, Gereon Hüttmann, Robert Huber, Oula Peñate Medina, Linh Ha, Patricia Ulloa, Naomi Larsen, Arianna Ferrari, Magdalena Rafecas, Mark Ellrichmann, Mariya S. Pravdivtseva, Mariia Anikeeva, Jana Humbert, Marcus Both, Jennifer E. Hundt, Jan-Bernd Hövener
Publikováno v:
Frontiers in Immunology, Vol 12 (2021)
Imaging techniques have evolved impressively lately, allowing whole new concepts like multimodal imaging, personal medicine, theranostic therapies, and molecular imaging to increase general awareness of possiblities of imaging to medicine field. Here
Externí odkaz:
https://doaj.org/article/0816e60bf23c465aa04f3e40d520ffb1
Autor:
Mariia Anikeeva, Maitreyi Sangal, Oliver Speck, Graham Norquay, Maaz Zuhayra, Ulf Lützen, Josh Peters, Olav Jansen, Jan-Bernd Hövener
Publikováno v:
Zeitschrift für Pneumologie. 19:264-276
Autor:
Josh P. Peters, Frowin Ellermann, Mariia Anikeeva, Andrey N. Pravdivtsev, Philip Saul, Arianna Ferrari, Ulf Lützen, Maaz Zuhayra, Olav Jansen, Jan-Bernd Hövener
Publikováno v:
Die Radiologie. 62:486-495
Autor:
Josh P, Peters, Frowin, Ellermann, Mariia, Anikeeva, Andrey N, Pravdivtsev, Philip, Saul, Arianna, Ferrari, Ulf, Lützen, Maaz, Zuhayra, Olav, Jansen, Jan-Bernd, Hövener
Publikováno v:
Radiologie (Heidelberg, Germany)Literatur. 62(6)
Despite being one of the main pillars of modern diagnostics, magnetic resonance imaging (MRI) uses only a tiny fraction of its potential: no more than a millionth of all nuclear spins contribute to the MRI signal. In order to increase this fraction,
Autor:
Mariia, Anikeeva, Maitreyi, Sangal, Oliver, Speck, Graham, Norquay, Maaz, Zuhayra, Ulf, Lützen, Josh, Peters, Olav, Jansen, Jan-Bernd, Hövener
Publikováno v:
Radiologie (Heidelberg, Germany)Literatur. 62(6)
Magnetic resonance imaging (MRI) is a noninvasive technique that provides excellent contrast for soft tissue organs. However, due to the low density of protons and many air-tissue junctions, its application in the lung is limited. Thus, X‑ray-based
Autor:
Mariia Anikeeva, Marcin Siekacz, Tobias Schulz, Martin Albrecht, Toni Markurt, Liverios Lymperakis, P. Wolny
Publikováno v:
Physical Review Materials. 4
The incorporation of indium in GaN (0001) surfaces in dependence of strain is investigated by combining molecular-beam epitaxy (MBE) growth, quantitative transmission electron microscopy, and density-functional theory (DFT) calculations. Growth exper
Autor:
Mariia Anikeeva, Jens W. Tomm, Felix Mahler, Raffaella Calarco, Tobias Schulz, Liverios Lymperakis, Caroline Chèze, Jörg Neugebauer, Martin Albrecht
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Scientific Reports
Scientific Reports
We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative tra
Autor:
Bo Shen, M. Siekacz, Mariia Anikeeva, Martin Albrecht, Xianqiang Wang, Tobias Schulz, Zhizhong Chen, Liverios Lymperakis, Christoph Freysoldt, Caroline Chèze, Jörg Neugebauer, Xiantong Zheng
Publikováno v:
Physical Review Materials
Solid state devices based on InGaN\penalty1000-\hskip0ptalloys have revolutionized lighting applications and have resulted in huge energy savings. Here, the authors investigate the growth of single monolayer InGaN layers by well-designed growth exper
Autor:
Mariia Anikeeva, Ewa Grzanka, Martin Albrecht, Marta Sawicka, Tobias Schulz, Torsten Ernst, Grzegorz Staszczak, Czeslaw Skierbiszewski, Joanna Moneta, Tadeusz Suski, Marcin Siekacz, P. Wolny, A. Feduniewicz-Żmuda
Publikováno v:
Superlattices and Microstructures. 133:106209
In this work we investigate InGaN/GaN short period superlattices (SPSLs) grown on (0001) GaN and on relaxed In0.2Ga0.8N buffers with varying degree of plastic relaxation. The SPSLs were fabricated by plasma assisted molecular beam epitaxy (PAMBE). De