Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Marie-Estelle Gueunier-Farret"'
Autor:
Hiroyuki Kanda, Valentin Dan Mihailetchi, Marie‐Estelle Gueunier‐Farret, Jean‐Paul Kleider, Zakaria Djebbour, Jose Alvarez, Baranek Philippe, Olindo Isabella, Malte R. Vogt, Rudi Santbergen, Philip Schulz, Fiala Peter, Mohammad K. Nazeeruddin, James P. Connolly
Publikováno v:
Interdisciplinary Materials, Vol 1, Iss 1, Pp 148-156 (2022)
Abstract The current climate and energy crisis urgently needs solar cells with efficiencies above the 29% single junction efficiency bottleneck. Silicon/perovskite tandem solar cells are a solution, which is attracting much attention. While silicon/p
Externí odkaz:
https://doaj.org/article/033582b24874426cabbd91ae52b5c588
Publikováno v:
Solar Energy Materials and Solar Cells. 240:111699
Autor:
Koffi F. Ahanogbe, José Alvarez, Alexandre Jaffré, James P. Connolly, Marie-Estelle Gueunier-Farret, Erwann Fourmond, Seif El-Whibi, Alain Fave, Perrine Carroy, Zakaria Djebbour, Jean-Paul Kleider
Publikováno v:
EPJ Photovoltaics
EPJ Photovoltaics, 2022, Recent Advances in Spectroscopy and Microscopy of Thin-films Materials, Interfaces, and Solar Cells 2021', 13, pp.16. ⟨10.1051/epjpv/2022015⟩
EPJ Photovoltaics, 2022, Recent Advances in Spectroscopy and Microscopy of Thin-films Materials, Interfaces, and Solar Cells 2021', 13, pp.16. ⟨10.1051/epjpv/2022015⟩
International audience; Electroluminescence allows rapid characterization of an entire photovoltaic solar cell and visualization of defects at the micrometer scale. Here we focus on the optoelectronic properties of silicon interdigitated back contact
Autor:
Pere Roca i Cabarrocas, Sylvain Le Gall, Cyril Léon, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider
Publikováno v:
EPJ Photovoltaics
EPJ Photovoltaics, EDP sciences, 2020, EPJ Photovoltaics, 11, pp.4. ⟨10.1051/epjpv/2020002⟩
EPJ Photovoltaics, Vol 11, p 4 (2020)
28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28)
28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France
EPJ Photovoltaics, EDP sciences, 2020, EPJ Photovoltaics, 11, pp.4. ⟨10.1051/epjpv/2020002⟩
EPJ Photovoltaics, Vol 11, p 4 (2020)
28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28)
28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France
Epitaxial silicon layers were grown on highly doped c-Si substrates using the plasma-enhanced chemical vapour deposition process (PECVD) at low temperature (175 °C). The transport and defect-related properties of these epi-Si layers were characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1384add93091aa9c98aaf1738e79605f
https://hal.archives-ouvertes.fr/hal-02472834
https://hal.archives-ouvertes.fr/hal-02472834
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2019, 216 (13), pp.1800877. ⟨10.1002/pssa.201800877⟩
physica status solidi (a), Wiley, 2019, 216 (13), pp.1800877. ⟨10.1002/pssa.201800877⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b8ef26dde744f223cd5f0a9c683ea0b
https://hal-centralesupelec.archives-ouvertes.fr/hal-02308332
https://hal-centralesupelec.archives-ouvertes.fr/hal-02308332
Autor:
Valentin Giglia, Sébastien Dubois, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, José Alvarez, Audrey Morisset, Raphaël Cabal, Bernadette Grange
Publikováno v:
SiliconPV 2019, THE 9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS
SiliconPV 2019, THE 9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS, Apr 2019, Leuven, Belgium. pp.040012, ⟨10.1063/1.5123839⟩
SiliconPV 2019, THE 9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS, Apr 2019, Leuven, Belgium. pp.040012, ⟨10.1063/1.5123839⟩
International audience; Passivating the contacts of crystalline silicon (c-Si) solar cells with a polycrystalline silicon layer (poly-Si) on a thin oxide (SiOx) film allows to decrease the recombination current at the metal/c-Si interface. In this st
Autor:
Audrey Morisset, Marie-Estelle Gueunier-Farret, Raphaël Cabal, Sébastien Dubois, Jean-Paul Kleider, Bernadette Grange, Clément Marchat, José Alvarez
Publikováno v:
Silicon PV 2018
Silicon PV 2018, Mar 2018, Lausanne, Switzerland. pp.040017, ⟨10.1063/1.5049280⟩
Silicon PV 2018, Mar 2018, Lausanne, Switzerland. pp.040017, ⟨10.1063/1.5049280⟩
International audience; Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin siliconoxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd4dcfdf3658c582e91163510530b4e5
https://hal-centralesupelec.archives-ouvertes.fr/hal-01943223
https://hal-centralesupelec.archives-ouvertes.fr/hal-01943223
Autor:
Audrey Morisset, Clément Marchat, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Sébastien Dubois, Bernadette Grange, José Alvarez, Raphaël Cabal
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2019, 200, pp.109912. ⟨10.1016/j.solmat.2019.109912⟩
Solar Energy Materials and Solar Cells, 2019, 200, pp.109912. ⟨10.1016/j.solmat.2019.109912⟩
Solar Energy Materials and Solar Cells, Elsevier, 2019, 200, pp.109912. ⟨10.1016/j.solmat.2019.109912⟩
Solar Energy Materials and Solar Cells, 2019, 200, pp.109912. ⟨10.1016/j.solmat.2019.109912⟩
Passivating the contacts of crystalline silicon (c-Si) solar cells with a poly-crystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) is currently sparking interest for reducing recombination at the interface between the metal elec
Autor:
José Alvarez, Clément Marchat, Audrey Morisset, Raphaël Cabal, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Sébastien Dubois, Bernadette Grange
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2018, pp.1800603. ⟨10.1002/pssa.201800603⟩
physica status solidi (a), 2018, pp.1800603. ⟨10.1002/pssa.201800603⟩
physica status solidi (a), Wiley, 2018, pp.1800603. ⟨10.1002/pssa.201800603⟩
physica status solidi (a), 2018, pp.1800603. ⟨10.1002/pssa.201800603⟩
International audience; Passivating the contacts of crystalline silicon (c-Si) solar cells with a poly-crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO x) film are currently of growing interest to reduce recombination at the in
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩
Materials Science and Engineering: B, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩
Materials Science and Engineering: B, Elsevier, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩
Materials Science and Engineering: B, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩
International audience; The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si), offers a high open-circuit voltage (Voc) potential providing that both the interface defect pas