Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties

Autor: Aurélie Girard, Christophe Cardinaud, Mohamed Boufnichel, F. Roqueta, Ahmed Rhallabi, Guillaume Le Dain, Marie-Claude Fernandez

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (3), ⟨10.1116/1.5023590⟩

The authors developed a tool using a multiscale approach to simulate the silicon etching using Bosch process. Their study is focused on the analysis of the effect of the oxygen addition to C4F8 plasma during the deposition pulse. This is the compleme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fe1ff2b57296a78bbe131c2a500a6eb
https://hal.archives-ouvertes.fr/hal-01848351

Global Model of $\hbox{Cl}_{2}\hbox{/Ar}$ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP

Autor: R. Chanson, Christophe Cardinaud, Ahmed Rhallabi, Sophie Bouchoule, L. Gatilova, Marie-Claude Fernandez, A. Talneau

Publikováno v: IEEE Transactions on Plasma Science. 40:959-971

A multiscale approach has been developed in order to simulate the etch process of InP in an inductive coupled plasma (ICP) Cl2/Ar plasma discharge. The model consists of three modules: a global kinetic model of the Cl2/Ar plasma discharge, a sheath m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30941884d36eeda8e08983aae8aa2110
https://doi.org/10.1109/tps.2012.2183391

Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties

Autor: Marie Claude Fernandez, Christophe Cardinaud, R. Chanson, Jean Pierre Landesman, Ahmed Rhallabi

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2013, 31 (1), pp.011301. ⟨10.1116/1.4766681⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2013, 31 (1), pp.011301. ⟨10.1116/1.4766681⟩

International audience; A global kinetic model of Cl-2/Ar/N-2 plasma discharge has been developed, which allows calculation of the densities and fluxes of all neutral and charged species considered in the reaction scheme, as well as the electron temp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eecba29069a39dc25470a73cbd57b5b4
https://hal.archives-ouvertes.fr/hal-00806036

SF6and C4F8global kinetic models coupled to sheath models

Autor: Amand Pateau, Yehya Haidar, F. Roqueta, F. Taher, Marie Claude Fernandez, Ahmed Rhallabi, Mohamed Boufnichel, A. Mokrani

Publikováno v: Plasma Sources Science and Technology. 23:065037

Global kinetic models combined with Monte Carlo sheath models are developed for SF6 and C4F8 plasma discharges for silicon etching under the Bosch process. In SF6 plasma, the dominant positive ions are , , and F+ while in C4F8 the dominant positive i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cbff3e1ac6b2b3b0491bfdb69bee77d9
https://doi.org/10.1088/0963-0252/23/6/065037

Modelling of fluorine based high density plasma for the etching of silica glasses

Autor: Ahmed Rhallabi, Ludovic Lallement, Marie Claude Fernandez, Christophe Cardinaud

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2011, 29 (5), pp.051304. ⟨10.1116/1.3624786⟩

International audience; An etching simulator has been developed to study the etching of commercial silica glass (Pyrex®, D263®, AF45®, and Vycor®) in a SF6/Ar inductively coupled plasma (ICP) discharge. The etching model is based on the developme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e305dbf5cbe2adc143189d138fd65124
https://doi.org/10.1116/1.3624786