Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Marie Kudrnová"'
Autor:
Roman Gabor, Ladislav Cvrček, Marie Kudrnová, Josef Hlinka, Marek Večeř, Matěj Buřil, Jan Walter, Miha Čekada, Aljaž Drnovšek, Petr Unucka, Kateřina Mamulová Kutláková, Oldřich Motyka, Jana Seidlerová
Publikováno v:
Applied Surface Science Advances, Vol 22, Iss , Pp 100615- (2024)
The study focuses on an innovative process for the use of a ZrN coating on Ti6Al4V alloy for orthopaedic bone implants. The preparation process combines the technology of physical vapour deposition (PVD) and micro-arc oxidation (MAO) to achieve hydro
Externí odkaz:
https://doaj.org/article/b5e9ea77596d45bfb90b09e0b9e81921
Autor:
Jana Rejková, Marie Kudrnová
Publikováno v:
Paliva. :189-193
Molten salt mixtures are considered media for many modern technologies using their ability to store thermal energy, thermal stability at high temperatures, low melting point, and other properties. The disadvantage of their use is high corrosion aggre
Autor:
Jana REJKOVÁ, Marie KUDRNOVÁ
Publikováno v:
METAL 2022 Conference Proeedings.
Publikováno v:
Microelectronic Engineering. 106:132-138
Si ohmic contacts on N-type 4H- and 6H-SiC with contact resistivity comparable with Ni metallizations were prepared. After etching-off of the Si contacts and deposition of new, unannealed ones, good electrical parameters of the original contacts rema
Publikováno v:
Applied Surface Science. 257:4418-4421
We prepared Ni and Ni2Si Schottky contacts on lightly doped (5.5 × 1015 cm−3) n-type 6H–SiC and evaluated their thermal degradation after annealing in the temperature range of 750–1150 °C. Ni contacts had Schottky behavior after annealing at
Publikováno v:
Microelectronic Engineering. 87:274-277
A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750-1150^oC. Structures Ti(2)/Ni(50) and Ti
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
Widespread Ni/SiC contact after annealing at high temperatures provides good ohmic contact. We managed to prepare Si/SiC annealed ohmic contacts with comparable qualities as Ni/SiC ones. However, the main benefit of these Si/SiC ohmic contacts lies i