Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Marie Krysak"'
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Despite years of research and development, the fundamental processes of photoionization, secondary electron generation, recombination, diffusion, and resist switching are poorly understood at the atomic level for EUVL. Multiscale modeling of these ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fabfd34328ad80c36f6244fdfc655671
https://doi.org/10.1117/12.2552837
https://doi.org/10.1117/12.2552837
Autor:
Christopher K. Ober, Youngjin Cho, Christine Y. Ouyang, Marie Krysak, Wenjie Sun, Reyes Sierra-Alvarez
Publikováno v:
Green Materials. 5:173-181
Photoacid generators (PAGs) with environmentally friendly cores and partially fluorinated sulfonate salts have been synthesized and studied. The cores were based on naturally occurring compounds such as cholesterol and glucose and were functionalized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e7ddb276bd17f6f68d43c7f0852afe6
https://doi.org/10.1680/jgrma.17.00020
https://doi.org/10.1680/jgrma.17.00020
Publikováno v:
Advanced Functional Materials. 22:3865-3873
Each film preparation technique affects the physical properties of the resulting coating and thus defines its applicability in modern device construction. In this context solvent based spin coated and solvent-free physical vapor deposited molecular g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dce047a6d6eba61ca6dfe950aa59e59
https://doi.org/10.1002/adfm.201103130
https://doi.org/10.1002/adfm.201103130
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a viable candidate for next generation lithography1, which drives the need for EUV resists capable of high resolution with high sensitivity and low LWR. While chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddbc566bcd9bf929f14368108d9b59b2
https://doi.org/10.1117/12.2086276
https://doi.org/10.1117/12.2086276
Autor:
Robert L. Bristol, Marie Krysak
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 16:023505
As lithography tools continue their progress in both NA and wavelength in pursuit of Moore’s law, we have reached the point where the number of features printed in a single pass can now easily surpass 1 trillion. Statistically, then, one should not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e43ed82a75e87a22f25168ca1f754718
https://doi.org/10.1117/1.jmm.16.2.023505
https://doi.org/10.1117/1.jmm.16.2.023505
Autor:
Steve Putna, Florian Gstrein, James M. Blackwell, Marie Krysak, Todd R. Younkin, Shane M. Harlson, Kent N. Frasure, Michael J. Leeson
Publikováno v:
SPIE Proceedings.
Recently, both PSI1 and ASML2 illustrated champion EUVL resolution using slow, non-chemically amplified inorganic resists. However, the requirements for EUVL manufacturing require simultaneous delivery of high resolution, good sensitivity, and low li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17830f75ad9e4dfee37ed4c1d6391777
https://doi.org/10.1117/12.2046677
https://doi.org/10.1117/12.2046677
Autor:
Christine Y. Ouyang, Souvik Chakrabarty, Markos Trikeriotis, Emmanuel P. Giannelis, Marie Krysak, Kyoungyong Cho, Christopher K. Ober
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc774b486c065eda288b242a603a8c32
https://doi.org/10.1117/12.2011490
https://doi.org/10.1117/12.2011490
Publikováno v:
SPIE Proceedings.
Chemically amplified resists (CARs) are the current workhorse for photolithography, where higher resolution and smaller feature size represent a continual driving force for the semiconductor industry. As the feature size decreases to sub-30 nm, LWR a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2962c209dd2ff097a62e6ed72d2a2c87
https://doi.org/10.1117/12.916318
https://doi.org/10.1117/12.916318
Autor:
Christine Y. Ouyang, Emmanuel P. Giannelis, Kyoungyong Cho, Marie Krysak, Robert L. Brainard, Markos Trikeriotis, Christopher K. Ober, Yeon Sook Chung, Brian Cardineau
Publikováno v:
SPIE Proceedings.
Performance requirements for EUV resists will necessitate the development of entirely new resist platforms. As outlined in the ITRS, the new resists for EUVL must show high etch resistance (to enable pattern transfer using thinner films), improved LE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d38dae11947b7a43ac0d291e4da1167
https://doi.org/10.1117/12.916384
https://doi.org/10.1117/12.916384
Autor:
Markos Trikeriotis, Brian Cardineau, Emmanuel P. Giannelis, Marie Krysak, Robert L. Brainard, Christopher K. Ober, Kyoungyong Cho
Publikováno v:
SPIE Proceedings.
Relative ligand binding energies were determined for a series of common ligand types with hafnium oxide nanoparticles, and from these results a series of novel strong binding ligands were developed. The relative equilibrium concentrations of two comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f9a17ef404c11f8cdc28e2f26b20bc
https://doi.org/10.1117/12.917014
https://doi.org/10.1117/12.917014