Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Marie France Beaufort"'
Publikováno v:
Materials Research Bulletin. 80:58-63
Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al2O3 substrates. In-situ X-ray diffraction experi
Autor:
Tony Abi-Tannous, Dominique Planson, Olivier Dezellus, Maher Soueidan, Jean-Francois Barbot, Gabriel Ferro, Christophe Raynaud, Marie-France Beaufort, Bérangère Toury, M. Lazar
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩
International audience; In this paper, the electrical properties of Ti3SiC2-based ohmic contacts formed on p-type 4H-SiC were studied. The growth of Ti3SiC2 thin films were studied onto 4H-SiC substrates by thermal annealing of Ti-Al layers deposited
Autor:
Maxime Vallet, Jean-François Barbot, Steve E. Donnelly, Jonathan A. Hinks, Marie-France Beaufort
Publikováno v:
physica status solidi c. 12:1156-1159
The first stages of growth of He-based planar defects under H supply have been investigated in (001)-oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the micr
Autor:
Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, Marie France Beaufort, Jean François Barbot, J. Penuelas, Dominique Planson
Publikováno v:
Materials Science Forum. :432-435
In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Ann
Autor:
Mirna Chaker Bechelany, Rudy Ghisleni, Marie-France Beaufort, Vanessa Proust, Philippe Miele, Samuel Bernard
Publikováno v:
Journal of the European Ceramic Society
Journal of the European Ceramic Society, Elsevier, 2016, 36 (15), pp.3671-3679. ⟨10.1016/j.jeurceramsoc.2016.04.023⟩
Journal of the European Ceramic Society, Elsevier, 2016, 36 (15), pp.3671-3679. ⟨10.1016/j.jeurceramsoc.2016.04.023⟩
International audience; This paper describes the fabrication of Si-C-Ti ceramics from titanium nanoparticle filled allylhydridopolycarbosilanes (Ti NP-filled AHPCS) using a casting/curing technique followed by pyrolysis at 1000 °C under argon. TGA a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71bd47638e6cd288493612ee9f7fa752
https://hal.umontpellier.fr/hal-01681391
https://hal.umontpellier.fr/hal-01681391
Autor:
Daniel Beaufort, Marie-France Beaufort, Anne-Catherine Pierson-Wickmann, Thierry Allard, Thomas Riegler
Publikováno v:
Ore Geology Reviews
Ore Geology Reviews, 2016, 79, pp.382-391. ⟨10.1016/j.oregeorev.2016.04.018⟩
Ore Geology Reviews, Elsevier, 2016, 79, pp.382-391. ⟨10.1016/j.oregeorev.2016.04.018⟩
Ore Geology Reviews, 2016, 79, pp.382-391. ⟨10.1016/j.oregeorev.2016.04.018⟩
Ore Geology Reviews, Elsevier, 2016, 79, pp.382-391. ⟨10.1016/j.oregeorev.2016.04.018⟩
International audience; Concentrations of 7% U and 1% Cu were identified in massive, brecciated, and amorphous carbonaceous materials (CM) characterized by strongly negative values of carbon stable isotopes (δ13C = − 39.1‰ relative to PDB). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efed03fa9b0f162ed8cbc51c7b93675b
https://hal-insu.archives-ouvertes.fr/insu-01312853/document
https://hal-insu.archives-ouvertes.fr/insu-01312853/document
Publikováno v:
physica status solidi c. 10:44-47
The effect of stress on the formation energy of H-platelets was studied through a 3D model based on elastic interaction by modelling the platelets as dislocation loops. A difference of self-formation energy between {111} and {100} platelets was estim
Publikováno v:
physica status solidi (a). 210:218-221
The defect accumulation in helium-implanted 4H–SiC was studied in a large range of temperatures through the elastic strain build-up determined by using X-ray diffraction measurements. The interstitial type defects formation and accumulation result
Autor:
Jean François Barbot, S. Leclerc, Christophe Tromas, Valerie Audurier, Alain Declémy, Michael Texier, Marie France Beaufort
Publikováno v:
Materials Science Forum. :485-488
Ion implantation into 4H-SiC induces a local gradient of strain which increases with the nuclear energy losses. With the increase of temperature the strain tends to become uniform in the whole implanted area requiring the migration of particles. In c