Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Marie Claire Cyrille"'
Autor:
Adriano Díaz Fattorini, Caroline Chèze, Iñaki López García, Christian Petrucci, Marco Bertelli, Flavia Righi Riva, Simone Prili, Stefania M. S. Privitera, Marzia Buscema, Antonella Sciuto, Salvatore Di Franco, Giuseppe D’Arrigo, Massimo Longo, Sara De Simone, Valentina Mussi, Ernesto Placidi, Marie-Claire Cyrille, Nguyet-Phuong Tran, Raffaella Calarco, Fabrizio Arciprete
Publikováno v:
Nanomaterials, Vol 12, Iss 8, p 1340 (2022)
In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties a
Externí odkaz:
https://doaj.org/article/17cb6adfb4f64be2b0c5701ffca7fd2d
Autor:
Steffen Wittrock, Philippe Talatchian, Miguel Romera, Mafalda Jotta Garcia, Marie-Claire Cyrille, Ricardo Ferreira, Romain Lebrun, Paolo Bortolotti, Ursula Ebels, Julie Grollier, Vincent Cros
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035042-035042-5 (2021)
Vortex based spin torque nano oscillators (STVOs) can present more complex dynamics than the spin torque induced gyrotropic (G) motion of the vortex core. The respective dynamic modes and the transition between them can be controlled by experimental
Externí odkaz:
https://doaj.org/article/820916f5e8c542588d8d38f767ce4960
Autor:
Clément Chassain, Andrzej Kusiak, Cécile Gaborieau, Yannick Anguy, Nguyet-Phuong Tran, Chiara Sabbione, Marie-Claire Cyrille, Jean-Luc Battaglia
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters.
Autor:
Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, Julien Garrione, Lucie Prazakova, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, Simon Martin, Chiara Sabbione, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, Abdelkader Souifi, Francois Andrieu, Gabriele Navarro
Publikováno v:
IEEE Transactions on Electron Devices
Autor:
A. Jannaud, Marianne Coig, J. Garrione, Mathieu Bernard, Marie-Claire Cyrille, F. Al Mamun, F. Mazen, B. Hemard, T. Magis, C. Socquet-Clerc, Gabriele Navarro, V. Meli, Guillaume Bourgeois, Emmanuel Nolot, Francois Andrieu, N. Bernier, J. P. Barnes, Eugénie Martinez, N. Castellani, C. Charpin, F. Milesi, C. Sabbione, F. Laulagnet
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
International audience; In this paper we investigate the effect of Carbon ion implantation in Ge$_2$ Sb$_2$ Te$_5$ based Phase-Change Memory (PCM) targeting reliability improvement in 4kb memory arrays. We show how ion implantation by beam line allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e57736ecd498b80119d3cb144b5aed
https://hal-cea.archives-ouvertes.fr/cea-03373794
https://hal-cea.archives-ouvertes.fr/cea-03373794
Autor:
J. Garrione, Marie-Claire Cyrille, Nicolas Bernier, G. Lama, N. Castellani, Gabriele Navarro, Emmanuel Nolot, Etienne Nowak, Mathieu Bernard, Guillaume Bourgeois
Publikováno v:
IRPS 2021-2021 IEEE International Reliability Physics Symposium
IRPS 2021-2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS)
IRPS 2021-2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS)
Phase-Change Memory (PCM) demonstrated to be a mature Non- Volatile Memory technology to address Storage Class Memory (SCM) applications that can be distinguished in memory-type (M-SCM) and storage-type (S-SCM). In this work, we present how aGeSbTe (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0536207a1fd4b18652fc5be16bd08df3
https://cea.hal.science/cea-03331482
https://cea.hal.science/cea-03331482
Autor:
Gauthier Lefevre, C. Sabbione, Sylvain David, Etienne Nowak, J. Garrione, N. Castellani, Marie-Claire Cyrille, Anna Lisa Serra, Nicolas Bernier, Christophe Vallée, Guillaume Bourgeois, Gabriele Navarro, Mathieu Bernard, O. Cueto, Christelle Charpin-Nicolle
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
International audience; In this paper, we demonstrate at array level and in industrial like devices, the extreme scaling down to nanometric dimensions of the Phase-Change Memory technology thanks to an innovative Self-Nano-Confined PCM device (SNC PC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85ded2bac29098bfe311f43f120a78b
https://hal-cea.archives-ouvertes.fr/cea-03119677/document
https://hal-cea.archives-ouvertes.fr/cea-03119677/document
Autor:
Damien Térébénec, Mathieu Bernard, Marie-Claire Cyrille, N. Castellani, Nicolas Bernier, Nguyet-Phuong Tran, Pierre Noé, Françoise Hippert, Philippe Kowalczyk, Vitomir Sever
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2021, 15 (3), pp.2000538. ⟨10.1002/pssr.202000538⟩
physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2021, 15 (3), pp.2000538. ⟨10.1002/pssr.202000538⟩
International audience
Autor:
Etienne Nowak, J. Garrione, Hatun Cinkaya, Guillaume Bourgeois, Adil Ozturk, Marie Claire Cyrille, Gabriele Navarro, Nicolas Guillaume, Arif Sirri Atilla Hasekioglu, Zahit Evren Kaya, Seref Kalem, Christelle Charpin-Nicolle
Publikováno v:
Solid-State Electronics
In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature
Autor:
L. Prazakova, Denis Rouchon, A.M. Papon, Névine Rochat, D. Morel, Gabriele Navarro, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Mathieu Bernard, Eugénie Martinez, C. Sabbione, Adeline Grenier, Marie-Claire Cyrille
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2020, 128 (21), pp.215102. ⟨10.1063/5.0027734⟩
E\PCOS 2021-European Phase-Change and Ovonic Symposium
E\PCOS 2021-European Phase-Change and Ovonic Symposium, Sep 2021, Oxford (online), United Kingdom
Journal of Applied Physics, American Institute of Physics, 2020, 128 (21), pp.215102. ⟨10.1063/5.0027734⟩
Journal of Applied Physics, 2020, 128 (21), pp.215102. ⟨10.1063/5.0027734⟩
E\PCOS 2021-European Phase-Change and Ovonic Symposium
E\PCOS 2021-European Phase-Change and Ovonic Symposium, Sep 2021, Oxford (online), United Kingdom
Journal of Applied Physics, American Institute of Physics, 2020, 128 (21), pp.215102. ⟨10.1063/5.0027734⟩
International audience; Ge-rich GeSbTe alloys allowed overcoming temperature limitations of phase-change memory technology. In this paper, we present a thorough investigation of the structural evolution and the crystallization process of these alloys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e187652424a6bb544715d848cf9e680
https://cea.hal.science/cea-03707285
https://cea.hal.science/cea-03707285