Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Marie Angelopoulos"'
Autor:
Brian C. Trinque, Tengjiao Hu, Ronald L. Jones, Marie Angelopoulos, C. Grant Willson, Dario L. Goldfarb, Wen-Li Wu, Michael D. Stewart, Eric K. Lin, Gerard M. Schmid
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 42:3063-3069
The requirement of nanometer dimensional control in photolithographic patterning underlies the future of emerging technologies, including next-generation semiconductors, nanofluids, photonics, and microelectromechanical systems. For chemically amplif
Autor:
Jack F. Douglas, Ronald L. Jones, D M. Goldfarb, Eric K. Lin, Wen-Li Wu, Christopher L. Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Marie Angelopoulos
Publikováno v:
Journal of Applied Physics. 93:1978-1986
Elastic incoherent neutron scattering is employed to parameterize changes in the atomic/molecular mobility in lithographic polymers as a function of film thickness. Changes in the 200 MHz and faster dynamics are estimated in terms of a harmonic oscil
Autor:
Wu-Song Huang, Karen Petrillo, Arpan P. Mahorowala, Ranee Wai-Ling Kwong, Marie Angelopoulos, Wayne M. Moreau, C. R. Guarnieri, Arieh Aviram, David R. Medeiros, Christopher Magg
Publikováno v:
IBM Journal of Research and Development. 45:639-650
Resists for advanced mask-making with high-voltage electron-beam writing tools have undergone dramatic changes over the last three decades. From PMMA and the other early chain-scission resists for micron dimensions to the aqueous-base-developable, dr
Autor:
Marie Angelopoulos
Publikováno v:
IBM Journal of Research and Development. 45:57-75
Conjugated polymers in the nondoped and doped conducting state have an array of potential applications in the microelectronics industry. Conducting polymers are effective discharge layers as well as conducting resists in electron beam lithography, fi
Autor:
R. Sooriyakumaran, James W. Taylor, John P. Simons, Marie Angelopoulos, G. W. Reynolds, Arpan P. Mahorowala, D. R. Medeiros, K. Petrillo, D. Hofer, Katherina Babich, Qinghuang Lin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1411-1419
Thin film imaging offers the possibility of extending 248 nm lithography to sub 150 nm resolution. We have been working on a 248 nm bilayer imaging scheme which utilizes a thin Si-containing resist on top of a thick, planarizing underlayer. The image
Autor:
Gregory Breyta, R. Sooriyakumaran, Carl E. Larson, Qinghuang Lin, Karen Petrillo, Marie Angelopoulos, Juliann Opitz, Gregory M. Wallraff, D. LaTulip, Katherina Babich, John P. Simons, R. A. Dipietro, Mark H. Sherwood, Donald C. Hofer, Debra Fenzel-Alexander, J. Muete
Publikováno v:
Journal of Photopolymer Science and Technology. 11:673-679
Thin film imaging resists (TSI and Bilayer systems) confine the imaging to a thin resist film (in the case of a bilayer system) which is subsequently transferred to a thicker polymeric underlayer. This approach has a number of potential advantages in
Publikováno v:
Journal of The Electrochemical Society. 144:436-442
This study examines the use of spin-applied conjugated polymers such as polyanilines for corrosion and dissolution protection of silver and copper. In particular, attention is given to the protection that these polymers provide under conditions of an
Publikováno v:
Macromolecules. 29:3046-3049
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 33:2725-2729
Poly(aniline-co-phenetidine)s were synthesized by the copolymerization of aniline and o-phenetidine (o-ethoxyaniline). The molar feed ratio of the starting aniline monomers was varied to result in copolymers with different compositions. The actual co
Publikováno v:
Synthetic Metals. 55:1552-1557
Amic acids are found to be dopants for polyaniline (Pani). In particular, polyamic acids, the precursors to polyimides, react with Pani to form an all-polymer conducting matrix composed of protonated Pani and the polyamate counteranion. The acid/base