Zobrazeno 1 - 10
of 599
pro vyhledávání: '"Marie, Xavier"'
Autor:
Ren, Lei, Robert, Cédric, Urbaszek, Bernhard, Marie, Xavier, Semina, Marina, Glazov, Mikhail M.
Publikováno v:
Comptes Rendus. Physique, Vol 22, Iss S4, Pp 43-52 (2021)
We review the physical mechanisms that allow tuning of absorption and emission characteristics in monolayer semiconductors. We use the model system of transition metal dichalcogenide mono-layers such as MoSe$_2$ or WSe$_2$ due to their very efficient
Externí odkaz:
https://doaj.org/article/15ce65481fd6406d99aae3b4b0c6f224
Autor:
Marie, Xavier, Lagarde, Delphine, Balocchi, Andrea, Robert, Cedric, Lombez, Laurent, Renucci, Pierre, Amand, Thierry, Cadiz, Fabian
Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of luminescence foll
Externí odkaz:
http://arxiv.org/abs/2407.18742
Autor:
Roux, Sébastien, Arnold, Christophe, Carré, Etienne, Plaud, Alexandre, Ren, Lei, Janzen, Eli, Edgar, James H., Maestre, Camille, Toury, Bérangère, Journet, Catherine, Garnier, Vincent, Steyer, Philippe, Taniguchi, Takashi, Watanabe, Kenji, Robert, Cédric, Marie, Xavier, Loiseau, Annick, Barjon, Julien
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influenc
Externí odkaz:
http://arxiv.org/abs/2405.09420
Autor:
Coraux, Johann, Marie, Xavier
Publikováno v:
Comptes Rendus. Physique, Vol 22, Iss S4, Pp 3-4 (2022)
Externí odkaz:
https://doaj.org/article/14dee5f32b884068b3f01777d382fef5
Rydberg states of excitons can reach microns in size and require extremely pure crystals. We introduce an experimental method for the rapid and spatially-resolved characterization of Rydberg excitons in copper oxide (Cu2O) with sub-micron resolution
Externí odkaz:
http://arxiv.org/abs/2402.02948
Autor:
Fraunié, Jules, Jamil, Rayan, Kantelberg, Richard, Roux, Sébastien, Petit, Lionel, Lepleux, Emmanuel, Pacheco, Louis, Watanabe, Kenji, Taniguchi, Takashi, Jacques, Vincent, Lombez, Laurent, Glazov, Mikhail M., Lassagne, Benjamin, Marie, Xavier, Robert, Cedric
For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the m
Externí odkaz:
http://arxiv.org/abs/2307.08146
Autor:
Lamsaadi, Hassan, Beret, Dorian, Paradisanos, Ioannis, Renucci, Pierre, Lagarde, Delphine, Marie, Xavier, Urbaszek, Bernhard, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Turchanin, Andrey, Lombez, Laurent, Combe, Nicolas, Paillard, Vincent, Poumirol, Jean-Marie
Publikováno v:
Nature Communications volume 14, Article number: 5881 (2023)
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile
Externí odkaz:
http://arxiv.org/abs/2306.13352
Autor:
Purbawati, Anike, Sarkar, Suman, Pairis, Sébastien, Kostka, Marek, Hadj-Azzem, Abdellali, Dufeu, Didier, Singh, Priyank, Bourgault, Daniel, Nuñez-Regueiro, Manuel, Vogel, Jan, Renard, Julien, Marty, Laëtitia, Fabre, Florentin, Finco, Aurore, Jacques, Vincent, Ren, Lei, Tiwari, Vivekanand, Robert, Cedric, Marie, Xavier, Bendiab, Nedjma, Rougemaille, Nicolas, Coraux, Johann
Publikováno v:
ACS Applied Electronic Materials, 5, 764 (2023)
Van der Waals magnetic materials are building blocks for novel kinds of spintronic devices and playgrounds for exploring collective magnetic phenomena down to the two-dimensional limit. Chromium-tellurium compounds are relevant in this perspective. I
Externí odkaz:
http://arxiv.org/abs/2301.09127
Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Autor:
Estrada-Real, Ana, Paradisanos, Ioannis, Wiecha, Peter R., Poumirol, Jean-Marie, Cuche, Aurelien, Agez, Gonzague, Lagarde, Delphine, Marie, Xavier, Larrey, Vincent, Müller, Jonas, Larrieu, Guilhem, Paillard, Vincent, Urbaszek, Bernhard
Publikováno v:
Communication Physics 6, 102 (2023)
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayer
Externí odkaz:
http://arxiv.org/abs/2210.14058
Autor:
Gan, Ziyang, Paradisanos, Ioannis, Estrada-Real, Ana, Picker, Julian, Najafidehaghani, Emad, Davies, Francis, Neumann, Christof, Robert, Cedric, Wiecha, Peter, Watanabe, Kenji, Taniguchi, Takashi, Marie, Xavier, Krasheninnikov, Arkady V., Urbaszek, Bernhard, George, Antony, Turchanin, Andrey
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dim
Externí odkaz:
http://arxiv.org/abs/2205.04751