Zobrazeno 1 - 10
of 1 276
pro vyhledávání: '"Marie, X"'
Autor:
Vergnaud, C., Tiwari, V., Ren, L., Taniguchi, T., Watanabe, K., Okuno, H., de Moraes, I. Gomes, Marty, A., Robert, C., Marie, X., Jamet, M.
Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsula
Externí odkaz:
http://arxiv.org/abs/2407.12944
Autor:
Lagarde, D., Glazov, M., Jindal, V., Mourzidis, K., Gerber, Iann, Balocchi, A., Lombez, L., Renucci, P., Taniguchi, T., Watanabe, K., Robert, C., Marie, X.
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence,
Externí odkaz:
http://arxiv.org/abs/2407.07188
Autor:
Jindal, V., Mourzidis, K., Balocchi, A., Robert, C., Li, P., Van Tuan, D., Lombez, L., Lagarde, D., Renucci, P., Taniguchi, T., Watanabe, K., Dery, H., Marie, X.
The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong lu
Externí odkaz:
http://arxiv.org/abs/2406.02095
Autor:
Clua-Provost, T., Mu, Z., Durand, A., Schrader, C., Happacher, J., Bocquel, J., Maletinsky, P., Fraunié, J., Marie, X., Robert, C., Seine, G., Janzen, E., Edgar, J. H., Gil, B., Cassabois, G., Jacques, V.
The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understandin
Externí odkaz:
http://arxiv.org/abs/2404.14155
Autor:
Kourmoulakis, G., Michail, A., Paradisanos, I., Marie, X., Glazov, M. M., Jorissen, B., Covaci, L., Stratakis, E., Papagelis, K., Parthenios, J., Kioseoglou, G.
We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission
Externí odkaz:
http://arxiv.org/abs/2307.12663
Autor:
Clua-Provost, T., Durand, A., Mu, Z., Rastoin, T., Fraunié, J., Janzen, E., Schutte, H., Edgar, J. H., Seine, G., Claverie, A., Marie, X., Robert, C., Gil, B., Cassabois, G., Jacques, V.
Publikováno v:
Phys. Rev. Lett. 131, 126901 (2023)
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplif
Externí odkaz:
http://arxiv.org/abs/2307.06774
Autor:
Aristegui, R., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Paradisanos, I., Robert, C., Marie, X., Urbaszek, B., Chenot, S., Cordier, Y., Damilano, B.
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by deposit
Externí odkaz:
http://arxiv.org/abs/2306.04404
Autor:
Durand, A., Clua-Provost, T., Fabre, F., Kumar, P., Li, J., Edgar, J. H., Udvarhelyi, P., Gali, A., Marie, X., Robert, C., Gérard, J. M., Gil, B., Cassabois, G., Jacques, V.
Publikováno v:
Phys. Rev. Lett. 131, 116902 (2023)
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the el
Externí odkaz:
http://arxiv.org/abs/2304.12071
Autor:
Ren, L., Robert, C., Glazov, M. M., Semina, M. A., Amand, T., Lombez, L., Lagarde, D., Taniguchi, T., Watanabe, K., Marie, X.
We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $\Delta$ between the br
Externí odkaz:
http://arxiv.org/abs/2303.17880
Autor:
Beret, D., Ren, L., Robert, C., Foussat, L., Renucci, P., Lagarde, D., Balocchi, A., Amand, T., Urbaszek, B., Watanabe, K., Taniguchi, T., Marie, X., Lombez, L.
We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffus
Externí odkaz:
http://arxiv.org/abs/2208.00734