Zobrazeno 1 - 10 of 98 pro vyhledávání: '"Marianne Germain"'
1
Akademický článek
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Autor: Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publikováno v: Micromachines, Vol 11, Iss 1, p 101 (2020)
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analy
Externí odkaz: https://doaj.org/article/5f6cca3341cf44bf829b66521fed87ef
Zobrazit plný text záznamu
2
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
Autor: Farid Medjdoub, Alaleh Tajalli, Roland Püsche, Joff Derluyn, Idriss Abid, Riad Kabouche, Stefan Degroote, Marianne Germain, Gaudenzio Meneghesso, Matteo Meneghini
Publikováno v: physica status solidi (a)
physica status solidi (a), Wiley, 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩
physica status solidi (a), Wiley, 2019, ⟨10.1002/pssa.201900687⟩
physica status solidi (a), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩
International audience; Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8e36549a66af9f4e9bc423b557bc24a
https://hal.archives-ouvertes.fr/hal-02363323/document
Zobrazit plný text záznamu
4
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Autor: Stefan Degroote, Farid Medjdoub, Joff Derluyn, Roland Püsche, Marianne Germain, Davide Benazzi, Sven Besendörfer, Riad Kabouche, Alaleh Tajalli, Matteo Meneghini, Idriss Abid, Elke Meissner, Enrico Zanoni, Matteo Borga, Gaudenzio Meneghesso, Carlo De Santi
Publikováno v: Micromachines
Volume 11
Issue 1
Micromachines, Vol 11, Iss 1, p 101 (2020)
Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩
Micromachines, MDPI, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analy
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12509ec13daf090f97329c575f2c9790
Zobrazit plný text záznamu
5
Gallium nitride MEMS resonators: how residual stress impacts design and performances
Autor: Lionel Buchaillot, Pascal Tilmant, Marc Faucher, Stefan Degroote, Marianne Germain, Christophe Morelle, Vanessa Avramovic, V. Zhang, Joff Derluyn, Virginie Brandli, Etienne Okada, François Vaurette, Bertrand Grimbert, Didier Theron, Isabelle Roch-Jeune
Publikováno v: Microsystem Technologies
Microsystem Technologies, Springer Verlag, 2018, 24 (1), pp.371-377. ⟨10.1007/s00542-017-3293-0⟩
Microsystem Technologies, 2018, 24 (1), pp.371-377. ⟨10.1007/s00542-017-3293-0⟩
International audience; Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In clamped-clamped beams, it is well known
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b304c00cd5fa7abfa332bf3d9bb6d22
https://doi.org/10.1007/s00542-017-3293-0
Zobrazit plný text záznamu
6
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
Autor: Joff Derluyn, Roland Püsche, Riad Kabouche, Etienne Okada, Farid Medjdoub, Malek Zegaoui, Stefan Degroote, Marianne Germain, R. Pecheux
Publikováno v: 13th European Microwave Integrated Circuits Conference (EuMIC 2018)
13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩
International audience; We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers for millimeter-wave applications: 1) carbon doped GaN high electron mobility transistors (HEMTs)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dce6ae4b304ac09f2eee6849027f716a
https://hal.archives-ouvertes.fr/hal-02356753/file/paper_eumw_2018.pdf
Zobrazit plný text záznamu
7
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics
Autor: Elke Meissner, Joff Derluyn, Marianne Germain
Publikováno v: Integrated Circuits and Systems ISBN: 9783319779935
One of the major factors in determining the quality of GaN technology is the epitaxial step. This chapter reviews two different approaches: the use of bulk GaN substrates and GaN-on-Si epitaxy.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc9159fafe2bea6e5bdfe52766aae751
https://doi.org/10.1007/978-3-319-77994-2_1
Zobrazit plný text záznamu
8
Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices
Autor: Michael Knetzger, Marianne Germain, Joff Derluyn, Elke Meissner, Jochen Friedrich
Publikováno v: Solid State Phenomena. 242:417-420
The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The lea
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76a3ff305c8134cef9b626ec7dd52da6
https://doi.org/10.4028/www.scientific.net/ssp.242.417
Zobrazit plný text záznamu
9
Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting
Autor: Ruben Lieten, Quan-Bao Ma, Gustaaf Borghs, Stefan Degroote, Marianne Germain
Publikováno v: Journal of Electronic Materials. 44:202-209
Indium-rich InGaN films were grown on Ge(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the indium flux on the structural properties, surface morphology, and photocurrent for water splitting has been investigated.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ca20b04affabfb6d33351a7582c4ae9
https://doi.org/10.1007/s11664-014-3454-1
Zobrazit plný text záznamu
10
GaN-on-Si for Power Technology
Autor: Joff Derluyn, Marianne Germain, B. Sijmus, Stefan Degroote, Domenica Visalli
Publikováno v: ECS Transactions. 50:173-176
The optimization of the crystal growth of the GaN buffer, and more in general of the III-nitride epilayers, cannot be exclusively done at material level through crystalline measurements. As a matter of fact, device parameters such as current density,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::287d371f5beed13a21d6326ff1030b04
https://doi.org/10.1149/05003.0173ecst
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje