Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Marianne E. Bathen"'
Autor:
Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Ö. Sveinbjörnsson, Ulrike Grossner, J. Peder Bergman, Lasse Vines, Jawad Ul-Hassan
Publikováno v:
APL Materials, Vol 11, Iss 3, Pp 031107-031107-10 (2023)
One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect,
Externí odkaz:
https://doaj.org/article/669257e4429c4e43ad36d1841f6fec1d
Autor:
Christian Dorfer, Marianne E. Bathen, Salvatore Race, Piyush Kumar, Alexander Tsibizov, Judith Woerle, Ulrike Grossner
Publikováno v:
Applied Physics Letters, 122 (18)
We demonstrate that the multi-photon absorption edge transient-current technique (edge-TCT) can be used to three-dimensionally map the impact of defect distributions on device characteristics in situ inside the bulk of silicon carbide devices. A ∼5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bc1e6eb6749591f776e4518228430bf
https://hdl.handle.net/20.500.11850/612920
https://hdl.handle.net/20.500.11850/612920
