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Autor:
Ewould van West, Jin-Soo Kim, Won-Kwang Ma, Myoung-Soo Kim, Kyu-Tae Sun, Peter Nikolsky, Maryana Escalante Marun, Won-Taik Kwon, Greet Storms, Sungki Park, Marian Otter, Young-Sik Kim, Roy Anunciado
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In this paper we describe the joint development and optimization of the critical dimension uniformity (CDU) at an advanced 300 mm ArFi semiconductor facility of SK Hynix in the high volume device. As the ITRS CDU specification shrinks, semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae567d0bc5d284d39dc4280a2594586
https://doi.org/10.1117/12.2057390
https://doi.org/10.1117/12.2057390
